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IXFR80N50Q3-VB Product details
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IXFR80N50Q3-VB Product Introduction
The IXFR80N50Q3-VB is a single N-channel MOSFET in a TO247 package. It has a breakdown voltage (VDS) of 650V, a gate drive voltage range of ±30V (VGS), and an on-resistance (RDS(ON)) of 75mΩ at VGS = 10V. The product is rated at 47A and is designed with Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it ideal for high-voltage, high-power conversion applications.
The IXFR80N50Q3-VB is a single N-channel MOSFET in a TO247 package. It has a breakdown voltage (VDS) of 650V, a gate drive voltage range of ±30V (VGS), and an on-resistance (RDS(ON)) of 75mΩ at VGS = 10V. The product is rated at 47A and is designed with Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it ideal for high-voltage, high-power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 650 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 75mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 47 | A |
| **Technology** | SJ_Multi-EPI | - |
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 650 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 75mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 47 | A |
| **Technology** | SJ_Multi-EPI | - |
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion module**:
The IXFR80N50Q3-VB can be used in power factor correction (PFC) modules in power conversion equipment. The low on-resistance and high current capability of this device make it very suitable for use in PFC circuits to improve the power efficiency of the system and reduce power losses.
2. **Electric vehicle charger**:
The high voltage capability and excellent switching characteristics of this MOSFET make it very suitable for use in electric vehicle charging stations or on-board chargers. It can handle high current requirements in high voltage environments, which helps to achieve fast and efficient charging.
3. **Industrial motor drive**:
In industrial motor drives, the IXFR80N50Q3-VB is used as a switching element in inverters, which can switch efficiently at high voltages to drive motors. This application requires devices with fast switching capabilities, low losses and high reliability.
4. **Inverter and Uninterruptible Power Supply (UPS) Systems**:
The IXFR80N50Q3-VB can also be used in inverter and UPS systems to convert DC to AC. Its high voltage resistance can meet the needs of these systems and ensure reliable power conversion.
1. **High-efficiency power conversion module**:
The IXFR80N50Q3-VB can be used in power factor correction (PFC) modules in power conversion equipment. The low on-resistance and high current capability of this device make it very suitable for use in PFC circuits to improve the power efficiency of the system and reduce power losses.
2. **Electric vehicle charger**:
The high voltage capability and excellent switching characteristics of this MOSFET make it very suitable for use in electric vehicle charging stations or on-board chargers. It can handle high current requirements in high voltage environments, which helps to achieve fast and efficient charging.
3. **Industrial motor drive**:
In industrial motor drives, the IXFR80N50Q3-VB is used as a switching element in inverters, which can switch efficiently at high voltages to drive motors. This application requires devices with fast switching capabilities, low losses and high reliability.
4. **Inverter and Uninterruptible Power Supply (UPS) Systems**:
The IXFR80N50Q3-VB can also be used in inverter and UPS systems to convert DC to AC. Its high voltage resistance can meet the needs of these systems and ensure reliable power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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