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IXFR80N50P-VB Product details
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Product Introduction
The IXFR80N50P-VB is an N-channel power MOSFET in a TO247 package with high voltage tolerance and high current handling capability. Its main features are a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. It has strong power conversion performance and is suitable for high-voltage, high-efficiency applications. Based on SJ_Multi-EPI technology, the device has an on-resistance (RDS(ON)) of only 75mΩ (at VGS=10V) in the on state, and the maximum current can reach 47A. This MOSFET is very suitable for demanding high-efficiency power conversion applications.
The IXFR80N50P-VB is an N-channel power MOSFET in a TO247 package with high voltage tolerance and high current handling capability. Its main features are a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. It has strong power conversion performance and is suitable for high-voltage, high-efficiency applications. Based on SJ_Multi-EPI technology, the device has an on-resistance (RDS(ON)) of only 75mΩ (at VGS=10V) in the on state, and the maximum current can reach 47A. This MOSFET is very suitable for demanding high-efficiency power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: High switching speed, suitable for fast switching applications
10. **Power consumption**: Good thermal management capability, able to work in high power applications
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: High switching speed, suitable for fast switching applications
10. **Power consumption**: Good thermal management capability, able to work in high power applications
Domain and module applications：
Applications and modules
1. **Electric Vehicle (EV) Drive Module**: With its high voltage and high current carrying capacity, the IXFR80N50P-VB is suitable for inverters and motor drive modules in electric vehicles, enabling efficient energy conversion and stable power output.
2. **Photovoltaic Inverter**: Its high withstand voltage of 650V and low on-resistance make it ideal for use in solar photovoltaic inverters. The device can efficiently handle the high voltage DC current converted from solar panels, ensuring maximum energy collection efficiency.
3. **Switching Power Supply (SMPS)**: In a switching power supply, the on-resistance and switching speed of the MOSFET are key factors affecting efficiency. With its low RDS(ON) and fast switching characteristics, the IXFR80N50P-VB is suitable for high-power industrial and server power modules.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used to handle high current conversion and voltage regulation, thereby providing continuous and stable power support to ensure the safe operation of key equipment.
5. **Industrial Automation**: In industrial equipment such as inverters and high-voltage power supplies, the IXFR80N50P-VB provides reliable power control and efficient energy conversion capabilities, which can effectively improve the overall efficiency and stability of industrial automation systems.
These application scenarios all rely on the high efficiency, high voltage resistance and high current handling capabilities of this model of MOSFET, which is suitable for key components in a variety of power conversion and power regulation systems.
1. **Electric Vehicle (EV) Drive Module**: With its high voltage and high current carrying capacity, the IXFR80N50P-VB is suitable for inverters and motor drive modules in electric vehicles, enabling efficient energy conversion and stable power output.
2. **Photovoltaic Inverter**: Its high withstand voltage of 650V and low on-resistance make it ideal for use in solar photovoltaic inverters. The device can efficiently handle the high voltage DC current converted from solar panels, ensuring maximum energy collection efficiency.
3. **Switching Power Supply (SMPS)**: In a switching power supply, the on-resistance and switching speed of the MOSFET are key factors affecting efficiency. With its low RDS(ON) and fast switching characteristics, the IXFR80N50P-VB is suitable for high-power industrial and server power modules.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used to handle high current conversion and voltage regulation, thereby providing continuous and stable power support to ensure the safe operation of key equipment.
5. **Industrial Automation**: In industrial equipment such as inverters and high-voltage power supplies, the IXFR80N50P-VB provides reliable power control and efficient energy conversion capabilities, which can effectively improve the overall efficiency and stability of industrial automation systems.
These application scenarios all rely on the high efficiency, high voltage resistance and high current handling capabilities of this model of MOSFET, which is suitable for key components in a variety of power conversion and power regulation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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