IXFR80N20Q-VB Product details
Product introduction:
IXFR80N20Q-VB is a single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of up to 96A. It uses trench technology to optimize on-resistance and switching performance, making it particularly suitable for applications requiring high efficiency and high power density. This MOSFET has a low on-resistance (RDS(ON)=21mΩ@VGS=10V) and can withstand a gate-source voltage (VGS) of ±20V. IXFR80N20Q-VB is ideal for high-efficiency power conversion and power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Continuous drain current (ID)**: 96A
- **Maximum pulsed drain current (ID, Pulse)**: Higher, depending on heat dissipation conditions
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation**: Up to a certain watt, depending on usage conditions
- **Switching speed**: High speed, suitable for fast switching applications
Domain and module applications:
IXFR80N20Q-VB performs well in the field of high power density and efficient power conversion, and is suitable for a variety of application scenarios:
- **Power management module**: Applicable to switch mode power supply (SMPS), DC-DC converter and inverter circuits. In these applications, it reduces switching loss and conduction loss through its low on-resistance and fast switching performance, thereby improving overall efficiency.
- **Electric vehicles and charging systems**: Applicable to motor drive control and high-power chargers in electric vehicles. Its high current carrying capacity and high voltage resistance enable it to meet the requirements of high-speed switching and high energy efficiency in electric vehicles.
- **Solar inverter**: In solar power generation systems, IXFR80N20Q-VB can be used for efficient energy conversion and optimize the energy transmission from solar power generation to the grid.
- **Industrial control**: Used in industrial-grade motor control and automation equipment to help achieve more precise and efficient power control.
This MOSFET is suitable for a wide range of high-efficiency power conversion and high-current control scenarios due to its high reliability and excellent electrical characteristics.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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