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IXFR80N20Q-VB Product details

Product introduction:

1. Product Introduction:
IXFR80N20Q-VB is a single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of up to 96A. It uses trench technology to optimize on-resistance and switching performance, making it particularly suitable for applications requiring high efficiency and high power density. This MOSFET has a low on-resistance (RDS(ON)=21mΩ@VGS=10V) and can withstand a gate-source voltage (VGS) of ±20V. IXFR80N20Q-VB is ideal for high-efficiency power conversion and power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 200V 4V 96A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Continuous drain current (ID)**: 96A
- **Maximum pulsed drain current (ID, Pulse)**: Higher, depending on heat dissipation conditions
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation**: Up to a certain watt, depending on usage conditions
- **Switching speed**: High speed, suitable for fast switching applications

Domain and module applications:

3. Application fields and module examples:
IXFR80N20Q-VB performs well in the field of high power density and efficient power conversion, and is suitable for a variety of application scenarios:

- **Power management module**: Applicable to switch mode power supply (SMPS), DC-DC converter and inverter circuits. In these applications, it reduces switching loss and conduction loss through its low on-resistance and fast switching performance, thereby improving overall efficiency.

- **Electric vehicles and charging systems**: Applicable to motor drive control and high-power chargers in electric vehicles. Its high current carrying capacity and high voltage resistance enable it to meet the requirements of high-speed switching and high energy efficiency in electric vehicles.

- **Solar inverter**: In solar power generation systems, IXFR80N20Q-VB can be used for efficient energy conversion and optimize the energy transmission from solar power generation to the grid.

- **Industrial control**: Used in industrial-grade motor control and automation equipment to help achieve more precise and efficient power control.

This MOSFET is suitable for a wide range of high-efficiency power conversion and high-current control scenarios due to its high reliability and excellent electrical characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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