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IXFR64N60P-VB Product details
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1. IXFR64N60P-VB MOSFET Product Introduction
IXFR64N60P-VB is a single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET is based on Super Junction (SJ) Multi-EPI technology, providing efficient current control and low on-resistance (RDS(ON)). The on-resistance is 75mΩ at VGS=10V and the maximum continuous drain current is 47A. With its high breakdown voltage and low loss characteristics, it performs well in high-power applications and is particularly suitable for high-voltage conversion and switching circuits in industrial and power electronics systems.
IXFR64N60P-VB is a single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET is based on Super Junction (SJ) Multi-EPI technology, providing efficient current control and low on-resistance (RDS(ON)). The on-resistance is 75mΩ at VGS=10V and the maximum continuous drain current is 47A. With its high breakdown voltage and low loss characteristics, it performs well in high-power applications and is particularly suitable for high-voltage conversion and switching circuits in industrial and power electronics systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFR64N60P-VB detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Superjunction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: Suitable for high power applications
- **Operating frequency**: Suitable for medium and high frequency switching applications
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Superjunction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: Suitable for high power applications
- **Operating frequency**: Suitable for medium and high frequency switching applications
Domain and module applications：
3. Application fields and modules
IXFR64N60P-VB MOSFET is widely used in many fields due to its high voltage, high current and low conduction loss characteristics, especially in the following modules and scenarios:
1. **Power conversion system**:
In high-voltage AC-DC and DC-DC converters, IXFR64N60P-VB can achieve efficient power conversion and reduce switching losses, and is suitable for server power supplies, industrial power supplies and power modules for communication equipment.
2. **Solar inverter**:
Due to its high VDS of 650V, IXFR64N60P-VB can be used for power switches in solar photovoltaic inverter systems, providing efficient energy conversion and supporting high input voltages.
3. **Electric vehicles and motor drives**:
In the inverter module of electric vehicles, IXFR64N60P-VB can help improve the overall efficiency of the electric vehicle drive system. Its high current carrying capacity makes it suitable for motor control and drive applications.
4. **Uninterruptible Power System (UPS)**:
The IXFR64N60P-VB ensures efficient power management in UPS systems, ensuring stable power output during power fluctuations.
5. **Industrial Automation and Control**:
This MOSFET is ideal for motor drive, load management and power switching applications in industrial control and automation systems, capable of handling high voltage and high current requirements.
IXFR64N60P-VB MOSFET is widely used in many fields due to its high voltage, high current and low conduction loss characteristics, especially in the following modules and scenarios:
1. **Power conversion system**:
In high-voltage AC-DC and DC-DC converters, IXFR64N60P-VB can achieve efficient power conversion and reduce switching losses, and is suitable for server power supplies, industrial power supplies and power modules for communication equipment.
2. **Solar inverter**:
Due to its high VDS of 650V, IXFR64N60P-VB can be used for power switches in solar photovoltaic inverter systems, providing efficient energy conversion and supporting high input voltages.
3. **Electric vehicles and motor drives**:
In the inverter module of electric vehicles, IXFR64N60P-VB can help improve the overall efficiency of the electric vehicle drive system. Its high current carrying capacity makes it suitable for motor control and drive applications.
4. **Uninterruptible Power System (UPS)**:
The IXFR64N60P-VB ensures efficient power management in UPS systems, ensuring stable power output during power fluctuations.
5. **Industrial Automation and Control**:
This MOSFET is ideal for motor drive, load management and power switching applications in industrial control and automation systems, capable of handling high voltage and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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