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IXFR64N50Q3-VB Product details
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1. IXFR64N50Q3-VB Product Introduction
IXFR64N50Q3-VB is a single N-channel power MOSFET in TO247 package. It has high voltage resistance, can withstand 500V drain-source voltage (VDS), and has 80mΩ on-resistance (RDS(ON)) at a gate voltage of 10V, and a maximum current of 40A. The device uses super junction (SJ) multi-layer epitaxial technology to provide higher efficiency and lower conduction losses in high-voltage applications. Its higher gate-source voltage (VGS) allows operation up to ±30V, providing strong anti-interference capabilities.
IXFR64N50Q3-VB is a single N-channel power MOSFET in TO247 package. It has high voltage resistance, can withstand 500V drain-source voltage (VDS), and has 80mΩ on-resistance (RDS(ON)) at a gate voltage of 10V, and a maximum current of 40A. The device uses super junction (SJ) multi-layer epitaxial technology to provide higher efficiency and lower conduction losses in high-voltage applications. Its higher gate-source voltage (VGS) allows operation up to ±30V, providing strong anti-interference capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFR64N50Q3-VB Parameter Description
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain Current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain Current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
Domain and module applications：
3. Application fields and module examples
1. **Power conversion**: IXFR64N50Q3-VB is very suitable for use in high-voltage power conversion systems, such as **DC-DC Converter (DC-DC Converter)** and **Inverter**. Its high voltage withstand characteristics can handle 500V voltage in industrial and energy systems, effectively reducing losses and improving system efficiency.
2. **Electric vehicle charging piles**: Due to its high current carrying capacity and low on-resistance, this MOSFET can be used in electric vehicle charging piles. Especially in **fast chargers** that require high efficiency and high voltage processing, IXFR64N50Q3-VB can ensure fast charging speed and good heat dissipation performance.
3. **Photovoltaic inverter**: Photovoltaic systems require efficient inverters to convert DC power to AC power. The high voltage tolerance and low conduction loss of IXFR64N50Q3-VB make it perform well in photovoltaic inverters, capable of handling high-voltage DC input and improving energy conversion efficiency.
4. **Industrial Motor Drive**: In industrial motor drive applications, the high current handling capability of this MOSFET makes it suitable for **Variable Frequency Drive (VFD)** systems, ensuring that high-power motors can still work effectively under heavy loads.
In short, the IXFR64N50Q3-VB is a MOSFET suitable for a variety of high-voltage, high-efficiency power conversion and drive fields, and is widely used in energy, industry, and electric vehicles.
1. **Power conversion**: IXFR64N50Q3-VB is very suitable for use in high-voltage power conversion systems, such as **DC-DC Converter (DC-DC Converter)** and **Inverter**. Its high voltage withstand characteristics can handle 500V voltage in industrial and energy systems, effectively reducing losses and improving system efficiency.
2. **Electric vehicle charging piles**: Due to its high current carrying capacity and low on-resistance, this MOSFET can be used in electric vehicle charging piles. Especially in **fast chargers** that require high efficiency and high voltage processing, IXFR64N50Q3-VB can ensure fast charging speed and good heat dissipation performance.
3. **Photovoltaic inverter**: Photovoltaic systems require efficient inverters to convert DC power to AC power. The high voltage tolerance and low conduction loss of IXFR64N50Q3-VB make it perform well in photovoltaic inverters, capable of handling high-voltage DC input and improving energy conversion efficiency.
4. **Industrial Motor Drive**: In industrial motor drive applications, the high current handling capability of this MOSFET makes it suitable for **Variable Frequency Drive (VFD)** systems, ensuring that high-power motors can still work effectively under heavy loads.
In short, the IXFR64N50Q3-VB is a MOSFET suitable for a variety of high-voltage, high-efficiency power conversion and drive fields, and is widely used in energy, industry, and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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