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IXFR64N50P-VB Product details
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IXFR64N50P-VB Product Introduction
The IXFR64N50P-VB is a high-performance power MOSFET in a TO247 package, designed for high voltage and high current applications. With a drain-source withstand voltage of 500V and a maximum drain current of 40A, the device is suitable for a variety of electrical environments that require high performance and high reliability. Based on Super Junction (SJ) multi-epitaxial technology, the IXFR64N50P-VB has a low on-resistance (80mΩ @ VGS=10V), which can effectively reduce energy loss and improve the overall efficiency of the system. It is an ideal choice for modern power conversion and control applications.
The IXFR64N50P-VB is a high-performance power MOSFET in a TO247 package, designed for high voltage and high current applications. With a drain-source withstand voltage of 500V and a maximum drain current of 40A, the device is suitable for a variety of electrical environments that require high performance and high reliability. Based on Super Junction (SJ) multi-epitaxial technology, the IXFR64N50P-VB has a low on-resistance (80mΩ @ VGS=10V), which can effectively reduce energy loss and improve the overall efficiency of the system. It is an ideal choice for modern power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR64N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI
- **Model**: IXFR64N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXFR64N50P-VB is commonly used in high-efficiency switching power supply design, providing stable energy conversion at high voltage. It is widely used in power adapters, industrial power supplies and consumer electronics to improve overall power efficiency.
2. **Inverter**: In photovoltaic and wind power inverters, this MOSFET, as an important switching element, can achieve high efficiency and stability of DC-AC conversion and meet the high performance requirements of renewable energy systems.
3. **Power electronic equipment**: The high voltage and current capabilities of IXFR64N50P-VB make it suitable for a variety of power electronic equipment, such as power management systems and high-voltage power modules, ensuring reliability in complex electrical environments.
4. **Motor drive**: This device is widely used in motor drive systems, providing efficient current output, suitable for high-voltage motor control, achieving stable and reliable drive performance, and meeting the needs of industrial and automation equipment.
Through its excellent electrical performance, the IXFR64N50P-VB has a wide range of applicability in high-voltage power conversion and control applications, becoming an important component in various power and industrial applications.
1. **Switching power supply**: IXFR64N50P-VB is commonly used in high-efficiency switching power supply design, providing stable energy conversion at high voltage. It is widely used in power adapters, industrial power supplies and consumer electronics to improve overall power efficiency.
2. **Inverter**: In photovoltaic and wind power inverters, this MOSFET, as an important switching element, can achieve high efficiency and stability of DC-AC conversion and meet the high performance requirements of renewable energy systems.
3. **Power electronic equipment**: The high voltage and current capabilities of IXFR64N50P-VB make it suitable for a variety of power electronic equipment, such as power management systems and high-voltage power modules, ensuring reliability in complex electrical environments.
4. **Motor drive**: This device is widely used in motor drive systems, providing efficient current output, suitable for high-voltage motor control, achieving stable and reliable drive performance, and meeting the needs of industrial and automation equipment.
Through its excellent electrical performance, the IXFR64N50P-VB has a wide range of applicability in high-voltage power conversion and control applications, becoming an important component in various power and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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