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IXFR58N20Q-VB Product details
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Product Introduction
**IXFR58N20Q-VB** is a high-performance N-channel MOSFET in TO247 package with 200V withstand voltage, designed for high current applications. The device has a maximum drain current of 96A, a gate-source voltage range of ±20V, and a threshold voltage of 4V. Its on-resistance is 21mΩ (at VGS=10V). Based on Trench technology, this MOSFET performs well in power management, switch control, and high-efficiency drive applications, and is suitable for a variety of industrial and consumer electronics products.
**IXFR58N20Q-VB** is a high-performance N-channel MOSFET in TO247 package with 200V withstand voltage, designed for high current applications. The device has a maximum drain current of 96A, a gate-source voltage range of ±20V, and a threshold voltage of 4V. Its on-resistance is 21mΩ (at VGS=10V). Based on Trench technology, this MOSFET performs well in power management, switch control, and high-efficiency drive applications, and is suitable for a variety of industrial and consumer electronics products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR58N20Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Drain current (ID)**: 96A
- **Technology**: Trench
- **Model**: IXFR58N20Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power tools**: The IXFR58N20Q-VB is ideal for motor drives in power tools, providing stable performance under high current loads, ensuring efficient operation of the tools when in use.
2. **Power converters**: This MOSFET is suitable for switching power supplies and power converters, enabling efficient power conversion, and is widely used in power adapters and industrial power modules.
3. **Electric vehicles**: The IXFR58N20Q-VB can be used in motor control and drive systems in electric vehicles, capable of handling currents up to 96A, supporting efficient power output, and improving the overall performance of electric vehicles.
4. **Solar inverters**: In photovoltaic inverters, this MOSFET can be used for power conversion and control, supporting efficient energy management, and improving the efficiency of renewable energy utilization.
These application examples show the wide applicability of the IXFR58N20Q-VB in a variety of applications with high current and efficient energy conversion, meeting the high performance and reliability requirements of modern electronic devices.
1. **Power tools**: The IXFR58N20Q-VB is ideal for motor drives in power tools, providing stable performance under high current loads, ensuring efficient operation of the tools when in use.
2. **Power converters**: This MOSFET is suitable for switching power supplies and power converters, enabling efficient power conversion, and is widely used in power adapters and industrial power modules.
3. **Electric vehicles**: The IXFR58N20Q-VB can be used in motor control and drive systems in electric vehicles, capable of handling currents up to 96A, supporting efficient power output, and improving the overall performance of electric vehicles.
4. **Solar inverters**: In photovoltaic inverters, this MOSFET can be used for power conversion and control, supporting efficient energy management, and improving the efficiency of renewable energy utilization.
These application examples show the wide applicability of the IXFR58N20Q-VB in a variety of applications with high current and efficient energy conversion, meeting the high performance and reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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