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IXFR55N50-VB Product details
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Product Introduction: IXFR55N50-VB
IXFR55N50-VB is a high-performance single N-channel MOSFET in a TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, and it can handle a leakage current of up to 40A, making it suitable for a variety of harsh working environments. The device has a threshold voltage (Vth) of 3.8V, and an on-resistance (RDS(ON)) of 80mΩ when the gate-source voltage (VGS) is 10V, ensuring low power consumption during operation. IXFR55N50-VB uses SJ_Multi-EPI technology, has excellent thermal management performance and switching characteristics, and is an ideal choice for efficient power management solutions.
IXFR55N50-VB is a high-performance single N-channel MOSFET in a TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, and it can handle a leakage current of up to 40A, making it suitable for a variety of harsh working environments. The device has a threshold voltage (Vth) of 3.8V, and an on-resistance (RDS(ON)) of 80mΩ when the gate-source voltage (VGS) is 10V, ensuring low power consumption during operation. IXFR55N50-VB uses SJ_Multi-EPI technology, has excellent thermal management performance and switching characteristics, and is an ideal choice for efficient power management solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFR55N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR55N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples:
1. **Switching power supply**:
IXFR55N50-VB is particularly suitable for switching power supply (SMPS), which can efficiently convert electrical energy. It is suitable for power modules in industrial and consumer electronics products to ensure the efficiency and reliability of the system.
2. **Motor control**:
In motor drive systems, this MOSFET can be used as a high-current switch to control the start, stop and speed regulation of high-power motors. It is widely used in electric vehicles, industrial automation and robotics.
3. **Power inverter**:
IXFR55N50-VB is suitable for photovoltaic inverters and wind power generation systems to convert DC power to AC power, providing efficient power solutions for power grids or loads, especially in the field of renewable energy.
4. **Power electronics applications**:
The device is also suitable for high-voltage power management modules, such as power distribution systems and high-voltage converters, which can effectively handle high voltages and high currents to ensure the stability and efficiency of equipment.
Through the examples of the above application areas, the wide applicability and excellent performance of IXFR55N50-VB in high voltage and high current power electronics applications are demonstrated.
1. **Switching power supply**:
IXFR55N50-VB is particularly suitable for switching power supply (SMPS), which can efficiently convert electrical energy. It is suitable for power modules in industrial and consumer electronics products to ensure the efficiency and reliability of the system.
2. **Motor control**:
In motor drive systems, this MOSFET can be used as a high-current switch to control the start, stop and speed regulation of high-power motors. It is widely used in electric vehicles, industrial automation and robotics.
3. **Power inverter**:
IXFR55N50-VB is suitable for photovoltaic inverters and wind power generation systems to convert DC power to AC power, providing efficient power solutions for power grids or loads, especially in the field of renewable energy.
4. **Power electronics applications**:
The device is also suitable for high-voltage power management modules, such as power distribution systems and high-voltage converters, which can effectively handle high voltages and high currents to ensure the stability and efficiency of equipment.
Through the examples of the above application areas, the wide applicability and excellent performance of IXFR55N50-VB in high voltage and high current power electronics applications are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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