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IXFR50N50-VB Product details
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Product Introduction
**IXFR50N50-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage applications. Based on SJ_Multi-EPI technology, the device has excellent electrical performance and is suitable for power electronic equipment requiring high voltage and medium current. Its maximum drain-source voltage is 500V, the maximum drain current can reach 40A, and the on-resistance is as low as 80mΩ (@VGS=10V), making it excellent in a variety of applications.
**IXFR50N50-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage applications. Based on SJ_Multi-EPI technology, the device has excellent electrical performance and is suitable for power electronic equipment requiring high voltage and medium current. Its maximum drain-source voltage is 500V, the maximum drain current can reach 40A, and the on-resistance is as low as 80mΩ (@VGS=10V), making it excellent in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR50N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFR50N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power conversion**: IXFR50N50-VB is widely used in high-voltage power converters such as AC-DC power supplies and DC-DC converters, which can efficiently convert power and ensure the stability and efficiency of the power system.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control, providing high voltage and medium current driving capabilities to ensure stable operation and efficiency of the motor.
3. **Industrial control systems**: In industrial automation and control systems, IXFR50N50-VB is used in high-voltage switches and power management modules to meet the needs of industrial applications for high-performance components and provide reliable switching performance.
4. **Renewable energy**: The device is widely used in solar inverters and wind energy conversion systems, supporting the efficient conversion and utilization of renewable energy and promoting the development of green energy.
5. **Consumer Electronics**: IXFR50N50-VB can also be used for high-voltage LED drivers and power adapters, providing a stable power solution for modern electronic devices to meet the growing power requirements.
With its excellent electrical characteristics and high reliability, IXFR50N50-VB is an ideal choice for a variety of high-voltage applications, effectively meeting the needs of different fields.
1. **Power conversion**: IXFR50N50-VB is widely used in high-voltage power converters such as AC-DC power supplies and DC-DC converters, which can efficiently convert power and ensure the stability and efficiency of the power system.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control, providing high voltage and medium current driving capabilities to ensure stable operation and efficiency of the motor.
3. **Industrial control systems**: In industrial automation and control systems, IXFR50N50-VB is used in high-voltage switches and power management modules to meet the needs of industrial applications for high-performance components and provide reliable switching performance.
4. **Renewable energy**: The device is widely used in solar inverters and wind energy conversion systems, supporting the efficient conversion and utilization of renewable energy and promoting the development of green energy.
5. **Consumer Electronics**: IXFR50N50-VB can also be used for high-voltage LED drivers and power adapters, providing a stable power solution for modern electronic devices to meet the growing power requirements.
With its excellent electrical characteristics and high reliability, IXFR50N50-VB is an ideal choice for a variety of high-voltage applications, effectively meeting the needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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