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IXFR44N80P-VB Product details
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IXFR44N80P-VB Product Introduction
The IXFR44N80P-VB is a high voltage N-channel power MOSFET designed for high voltage and high efficiency power applications. It uses a TO247 package and can withstand a maximum drain-source voltage of 800V and a leakage current of 47A, making it very suitable for use in demanding high power environments. Using SJ_Multi-EPI technology, the IXFR44N80P-VB provides a low on-resistance (90mΩ @ VGS=10V), ensuring high efficiency and good thermal management during high power operation.
The IXFR44N80P-VB is a high voltage N-channel power MOSFET designed for high voltage and high efficiency power applications. It uses a TO247 package and can withstand a maximum drain-source voltage of 800V and a leakage current of 47A, making it very suitable for use in demanding high power environments. Using SJ_Multi-EPI technology, the IXFR44N80P-VB provides a low on-resistance (90mΩ @ VGS=10V), ensuring high efficiency and good thermal management during high power operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | 90mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR44N80P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 90mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR44N80P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 90mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**:
IXFR44N80P-VB is suitable for high-voltage switching power supplies such as AC-DC and DC-DC converters. Its high withstand voltage and low on-resistance enable it to effectively improve energy efficiency in high-power applications, reduce heat loss, and ensure system stability.
2. **Inverter**:
In solar photovoltaic systems and wind power inverters, IXFR44N80P-VB can be used as a high-efficiency switching element for DC-AC conversion. Because it can withstand high voltages, it can effectively handle the voltage output from the battery pack to ensure efficient operation of the system.
3. **Motor drive control**:
This MOSFET is suitable for motor drive systems, supporting high current and high voltage motor starting and speed regulation. Its fast switching capability helps improve the efficiency of motors and is commonly used in industrial automation, robotics, and electric vehicle drives.
4. **Battery Management System (BMS)**:
IXFR44N80P-VB can be used as a power switch in a battery management system to achieve efficient current control during charging and discharging, improve battery life and safety, and is widely used in electric vehicles and energy storage systems.
5. **Uninterruptible Power Supply (UPS)**:
In a UPS system, IXFR44N80P-VB, as a key switching element, can quickly switch power to ensure continuous power supply during power outages. Its high voltage handling capability and stability make the entire UPS system more reliable and responsive.
Through the above application examples, IXFR44N80P-VB shows its wide applicability in multiple high voltage and high current situations, becoming an important choice for high-efficiency power electronic equipment.
1. **High-voltage power converter**:
IXFR44N80P-VB is suitable for high-voltage switching power supplies such as AC-DC and DC-DC converters. Its high withstand voltage and low on-resistance enable it to effectively improve energy efficiency in high-power applications, reduce heat loss, and ensure system stability.
2. **Inverter**:
In solar photovoltaic systems and wind power inverters, IXFR44N80P-VB can be used as a high-efficiency switching element for DC-AC conversion. Because it can withstand high voltages, it can effectively handle the voltage output from the battery pack to ensure efficient operation of the system.
3. **Motor drive control**:
This MOSFET is suitable for motor drive systems, supporting high current and high voltage motor starting and speed regulation. Its fast switching capability helps improve the efficiency of motors and is commonly used in industrial automation, robotics, and electric vehicle drives.
4. **Battery Management System (BMS)**:
IXFR44N80P-VB can be used as a power switch in a battery management system to achieve efficient current control during charging and discharging, improve battery life and safety, and is widely used in electric vehicles and energy storage systems.
5. **Uninterruptible Power Supply (UPS)**:
In a UPS system, IXFR44N80P-VB, as a key switching element, can quickly switch power to ensure continuous power supply during power outages. Its high voltage handling capability and stability make the entire UPS system more reliable and responsive.
Through the above application examples, IXFR44N80P-VB shows its wide applicability in multiple high voltage and high current situations, becoming an important choice for high-efficiency power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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