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IXFR40N50Q2-VB Product details
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Product Introduction
**IXFR40N50Q2-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. Based on SJ_Multi-EPI technology, the device provides excellent electrical characteristics and is suitable for handling high voltage and medium current requirements. Its maximum drain-source voltage is 500V, the leakage current reaches 40A, and it has a low on-resistance (80mΩ@VGS=10V), making it excellent in power electronics and industrial applications.
**IXFR40N50Q2-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. Based on SJ_Multi-EPI technology, the device provides excellent electrical characteristics and is suitable for handling high voltage and medium current requirements. Its maximum drain-source voltage is 500V, the leakage current reaches 40A, and it has a low on-resistance (80mΩ@VGS=10V), making it excellent in power electronics and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR40N50Q2-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFR40N50Q2-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power conversion**: IXFR40N50Q2-VB is widely used in high-voltage power converters such as AC-DC power supplies and DC-DC converters. It can efficiently convert power and meet the efficiency and stability requirements of various power designs.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control. It can provide high voltage and medium current drive capabilities to ensure stable operation and efficient performance of the motor.
3. **Industrial control system**: In industrial automation and control systems, IXFR40N50Q2-VB is used for high-voltage switches and power management modules to meet the requirements of high-performance components in different industrial applications.
4. **Renewable energy**: This device is widely used in solar inverters and wind energy conversion systems to ensure the efficient conversion and utilization of renewable energy and support the development of green energy.
5. **Consumer Electronics**: IXFR40N50Q2-VB can also be used for high-voltage LED drivers and power adapters, providing reliable switching performance and high current capabilities for modern electronic devices.
With its excellent electrical characteristics and high reliability, IXFR40N50Q2-VB is an ideal choice for a variety of high-voltage applications, and can effectively meet various needs in different application scenarios.
1. **Power conversion**: IXFR40N50Q2-VB is widely used in high-voltage power converters such as AC-DC power supplies and DC-DC converters. It can efficiently convert power and meet the efficiency and stability requirements of various power designs.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control. It can provide high voltage and medium current drive capabilities to ensure stable operation and efficient performance of the motor.
3. **Industrial control system**: In industrial automation and control systems, IXFR40N50Q2-VB is used for high-voltage switches and power management modules to meet the requirements of high-performance components in different industrial applications.
4. **Renewable energy**: This device is widely used in solar inverters and wind energy conversion systems to ensure the efficient conversion and utilization of renewable energy and support the development of green energy.
5. **Consumer Electronics**: IXFR40N50Q2-VB can also be used for high-voltage LED drivers and power adapters, providing reliable switching performance and high current capabilities for modern electronic devices.
With its excellent electrical characteristics and high reliability, IXFR40N50Q2-VB is an ideal choice for a variety of high-voltage applications, and can effectively meet various needs in different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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