IXFR38N80Q2-VB Product details
Product introduction:
**IXFR38N80Q2-VB** is a high-performance single N-channel MOSFET in a TO247 package designed for high voltage applications. Its maximum drain-source voltage (VDS) is 800V, making it suitable for use in high voltage and high power environments and able to meet stringent performance requirements. The device has a maximum drain current (ID) of 20A and an on-resistance (RDS(ON)) of 220mΩ @ VGS=10V, ensuring good conductivity under high voltage conditions. The threshold voltage (Vth) is 3.5V, giving it fast response capabilities. Based on SJ_Multi-EPI technology, the IXFR38N80Q2-VB has good thermal stability and electrical characteristics, making it ideal for power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: IXFR38N80Q2-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 220mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power conversion**: IXFR38N80Q2-VB is widely used in high-voltage switching power supplies (SMPS), which can effectively convert 800V voltage power, and is suitable for industrial and commercial power systems.
2. **Motor control**: In high-voltage motor drive applications, this MOSFET can be used as an efficient switching element to drive high-voltage motors, ensuring the stability and efficiency of the system, especially suitable for electric vehicles and industrial automation equipment.
3. **Solar inverter**: In photovoltaic inverters, this MOSFET can be used for DC to AC conversion, meeting the high voltage requirements of solar power generation systems and improving the energy efficiency and reliability of the system.
4. **Electrical protection**: IXFR38N80Q2-VB can be used for protection switches of electrical equipment to prevent overvoltage and overcurrent, and ensure the safe operation of high-voltage equipment.
5. **Lighting control system**: In high-voltage lighting systems, such as driving metal halide lamps and high-pressure sodium lamps, this MOSFET can provide stable switching control and achieve efficient energy management.
With its high voltage characteristics and excellent conductivity, the IXFR38N80Q2-VB is an ideal choice for a variety of high-voltage applications to meet the various needs of modern power management.
Technical support:
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