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IXFR36N50P-VB Product details
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IXFR36N50P-VB Product Introduction
The IXFR36N50P-VB is a high-performance N-channel MOSFET in a TO247 package, designed for high-voltage applications. With a rated drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, it is suitable for operation in high-voltage and high-current environments. Using advanced SJ_Multi-EPI technology, the IXFR36N50P-VB provides low on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in improving efficiency and reducing heat generation, making it an ideal choice for power electronics applications.
The IXFR36N50P-VB is a high-performance N-channel MOSFET in a TO247 package, designed for high-voltage applications. With a rated drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, it is suitable for operation in high-voltage and high-current environments. Using advanced SJ_Multi-EPI technology, the IXFR36N50P-VB provides low on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in improving efficiency and reducing heat generation, making it an ideal choice for power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR36N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR36N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The IXFR36N50P-VB is an ideal switching element in high-voltage switching power supplies, capable of efficient DC-DC conversion, and is widely used in computer power supplies, industrial power supplies, and power adapters.
2. **Inverter**: This MOSFET can be used in photovoltaic and wind power inverters to convert high-voltage DC power into AC power, supporting the efficient use of renewable energy and power conversion.
3. **Motor Drive**: The IXFR36N50P-VB can be used as a drive element in motor control systems, supporting high-voltage and high-current motor starting and precise speed regulation, and is widely used in industrial automation and robots.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, the device can provide stable power switching to ensure continuous power supply to critical equipment during power outages, ensuring system reliability and safety.
5. **LED drive circuit**: IXFR36N50P-VB is also suitable for high-voltage LED drive applications. As a power switch, it regulates the current of high-voltage LED lamps and is suitable for commercial and industrial lighting projects.
With its excellent high voltage and low conduction loss characteristics, IXFR36N50P-VB is an excellent choice for various high-voltage power electronics applications, promoting the development of high-efficiency power management and conversion solutions.
1. **Switching Power Supply (SMPS)**: The IXFR36N50P-VB is an ideal switching element in high-voltage switching power supplies, capable of efficient DC-DC conversion, and is widely used in computer power supplies, industrial power supplies, and power adapters.
2. **Inverter**: This MOSFET can be used in photovoltaic and wind power inverters to convert high-voltage DC power into AC power, supporting the efficient use of renewable energy and power conversion.
3. **Motor Drive**: The IXFR36N50P-VB can be used as a drive element in motor control systems, supporting high-voltage and high-current motor starting and precise speed regulation, and is widely used in industrial automation and robots.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, the device can provide stable power switching to ensure continuous power supply to critical equipment during power outages, ensuring system reliability and safety.
5. **LED drive circuit**: IXFR36N50P-VB is also suitable for high-voltage LED drive applications. As a power switch, it regulates the current of high-voltage LED lamps and is suitable for commercial and industrial lighting projects.
With its excellent high voltage and low conduction loss characteristics, IXFR36N50P-VB is an excellent choice for various high-voltage power electronics applications, promoting the development of high-efficiency power management and conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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