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IXFR34N80-VB Product details
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IXFR34N80-VB Product Introduction
The IXFR34N80-VB is a high voltage N-channel power MOSFET in a TO247 package, designed for power applications that require high voltage and high efficiency. With a maximum drain-source voltage of 800V and a leakage current capability of 20A, the device is suitable for a variety of high-power electronic devices. Utilizing SJ_Multi-EPI technology, the IXFR34N80-VB achieves a lower on-resistance (220mΩ @ VGS=10V), thereby ensuring high efficiency and thermal management under high power loads, making it suitable for power conversion and control applications.
The IXFR34N80-VB is a high voltage N-channel power MOSFET in a TO247 package, designed for power applications that require high voltage and high efficiency. With a maximum drain-source voltage of 800V and a leakage current capability of 20A, the device is suitable for a variety of high-power electronic devices. Utilizing SJ_Multi-EPI technology, the IXFR34N80-VB achieves a lower on-resistance (220mΩ @ VGS=10V), thereby ensuring high efficiency and thermal management under high power loads, making it suitable for power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR34N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 220mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR34N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 220mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**:
IXFR34N80-VB is ideal for use in high-voltage switching power supplies, including AC-DC and DC-DC converters. Its high withstand voltage and low on-resistance characteristics enable this MOSFET to improve energy efficiency and reduce heat loss in high-power applications.
2. **Inverter**:
In solar photovoltaic systems and wind power inverters, IXFR34N80-VB can be used as an efficient switching element for DC-AC conversion. Due to its high voltage tolerance, the device can handle high voltage output from the battery pack, ensuring system stability and reliability.
3. **Motor drive**:
This MOSFET can be used in motor control systems to support high current and high voltage motor starting and speed regulation. Its fast switching characteristics enable significant efficiency improvements when driving motors, and is widely used in industrial automation and electric vehicle drives.
4. **Battery Management System**:
IXFR34N80-VB is also suitable for power switches in battery management systems. It can efficiently control current during charging and discharging, improve battery life and safety, and is commonly used in electric vehicles and energy storage systems.
5. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET can be used as a key switching element to quickly switch power to ensure continuous power support during power outages. Its high voltage handling capability and stability improve the reliability and response speed of the entire UPS system.
Through the above application examples, IXFR34N80-VB demonstrates its wide applicability in multiple high voltage and high current situations, and is an ideal choice for high-efficiency power electronic equipment.
1. **Power converter**:
IXFR34N80-VB is ideal for use in high-voltage switching power supplies, including AC-DC and DC-DC converters. Its high withstand voltage and low on-resistance characteristics enable this MOSFET to improve energy efficiency and reduce heat loss in high-power applications.
2. **Inverter**:
In solar photovoltaic systems and wind power inverters, IXFR34N80-VB can be used as an efficient switching element for DC-AC conversion. Due to its high voltage tolerance, the device can handle high voltage output from the battery pack, ensuring system stability and reliability.
3. **Motor drive**:
This MOSFET can be used in motor control systems to support high current and high voltage motor starting and speed regulation. Its fast switching characteristics enable significant efficiency improvements when driving motors, and is widely used in industrial automation and electric vehicle drives.
4. **Battery Management System**:
IXFR34N80-VB is also suitable for power switches in battery management systems. It can efficiently control current during charging and discharging, improve battery life and safety, and is commonly used in electric vehicles and energy storage systems.
5. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET can be used as a key switching element to quickly switch power to ensure continuous power support during power outages. Its high voltage handling capability and stability improve the reliability and response speed of the entire UPS system.
Through the above application examples, IXFR34N80-VB demonstrates its wide applicability in multiple high voltage and high current situations, and is an ideal choice for high-efficiency power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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