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IXFR32N80Q3-VB Product details
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Product Introduction
**IXFR32N80Q3-VB** is a high-performance N-channel MOSFET in a TO247 package designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V and can withstand a drain current (ID) of up to 20A. The device exhibits a low on-resistance (RDS(ON)) of 220mΩ at a gate-source voltage of 10V, which enables lower power consumption during switching operations and improves thermal management performance. IXFR32N80Q3-VB uses SJ_Multi-EPI technology, providing excellent switching characteristics and high reliability, especially suitable for harsh working environments.
**IXFR32N80Q3-VB** is a high-performance N-channel MOSFET in a TO247 package designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V and can withstand a drain current (ID) of up to 20A. The device exhibits a low on-resistance (RDS(ON)) of 220mΩ at a gate-source voltage of 10V, which enables lower power consumption during switching operations and improves thermal management performance. IXFR32N80Q3-VB uses SJ_Multi-EPI technology, providing excellent switching characteristics and high reliability, especially suitable for harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR32N80Q3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 220mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR32N80Q3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 220mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFR32N80Q3-VB is widely used in switching power supply design, especially under high voltage conditions, which can effectively reduce power consumption and heat generation, thereby improving the energy efficiency of the system, and is suitable for power management of industrial and consumer electronics.
2. **Motor drive**: In the motor control system, this MOSFET is suitable for driving brushless motors and stepper motors, and can achieve efficient current regulation. It is suitable for robots, automation equipment and power tools to improve their control accuracy and response speed.
3. **Photovoltaic inverter**: IXFR32N80Q3-VB plays a key role in photovoltaic inverters. It can effectively convert the direct current generated by solar cells into alternating current, improve the energy conversion efficiency of photovoltaic power generation systems, and is suitable for home and industrial solar systems.
4. **Battery Management System**: This device is widely used in battery management systems, which can achieve efficient control of battery charging and discharging, ensure the safety and performance of batteries in electric vehicles and energy storage systems, and provide a stable solution for battery management.
In summary, IXFR32N80Q3-VB has become an ideal choice for high-voltage power electronics design due to its excellent electrical performance and reliability. It is widely used in many fields such as switching power supplies, motor drives, photovoltaic inverters and battery management.
1. **Switching power supply**: IXFR32N80Q3-VB is widely used in switching power supply design, especially under high voltage conditions, which can effectively reduce power consumption and heat generation, thereby improving the energy efficiency of the system, and is suitable for power management of industrial and consumer electronics.
2. **Motor drive**: In the motor control system, this MOSFET is suitable for driving brushless motors and stepper motors, and can achieve efficient current regulation. It is suitable for robots, automation equipment and power tools to improve their control accuracy and response speed.
3. **Photovoltaic inverter**: IXFR32N80Q3-VB plays a key role in photovoltaic inverters. It can effectively convert the direct current generated by solar cells into alternating current, improve the energy conversion efficiency of photovoltaic power generation systems, and is suitable for home and industrial solar systems.
4. **Battery Management System**: This device is widely used in battery management systems, which can achieve efficient control of battery charging and discharging, ensure the safety and performance of batteries in electric vehicles and energy storage systems, and provide a stable solution for battery management.
In summary, IXFR32N80Q3-VB has become an ideal choice for high-voltage power electronics design due to its excellent electrical performance and reliability. It is widely used in many fields such as switching power supplies, motor drives, photovoltaic inverters and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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