IXFR32N80P-VB Product details
Product introduction:
The IXFR32N80P-VB is a high-voltage single N-channel MOSFET in a TO247 package designed for high-voltage applications. The device has a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 20A. It uses SJ_Multi-EPI technology with an on-resistance of 220mΩ@VGS=10V, designed to reduce switching losses and improve overall system efficiency. The IXFR32N80P-VB is ideal for applications such as power electronics, inverters, and high-voltage power supplies.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 220mΩ @ VGS=10V |
| Maximum drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
1. **High-voltage switching power supply (SMPS)**
IXFR32N80P-VB is suitable for high-voltage switching power supply design, especially in AC-DC and DC-DC converters. Its high voltage carrying capacity and low on-resistance enable it to provide efficient power conversion under various load conditions, and is widely used in industrial power supplies, adapters and chargers.
2. **Inverter system**
This MOSFET is suitable for inverter systems, especially in renewable energy applications such as solar inverters. Its high voltage characteristics and high current capabilities can convert power at high efficiency to ensure stable operation of the system.
3. **Motor control**
IXFR32N80P-VB can also be used in motor drive applications, especially the control of high-voltage DC motors and stepper motors. Its excellent on-characteristics enable it to handle high load currents, ensuring the efficiency and reliability of the motor during operation.
4. **Lighting and LED driver**
In LED driver modules, this MOSFET can be used as a driver element to ensure stable operation of LED lamps under high voltage conditions. Its low on-resistance characteristics help achieve high-efficiency lighting and is suitable for high-power LED lighting and commercial lighting systems.
In summary, IXFR32N80P-VB is widely used in high-voltage switching power supplies, inverters, motor control, LED drivers and other fields with its excellent voltage and current characteristics, becoming an important component in high-performance power electronics design.
Technical support:
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