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IXFR32N50Q-VB Product details
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IXFR32N50Q-VB Product Introduction
IXFR32N50Q-VB is a high-performance power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source withstand voltage is 500V and the maximum leakage current is 40A, which is suitable for a variety of electrical environments. The device is based on Super Junction (SJ) multi-epitaxial technology and has a low on-resistance (80mΩ @ VGS=10V), which can effectively reduce energy loss and improve the overall efficiency of the system. It is widely used in power conversion and control modules.
IXFR32N50Q-VB is a high-performance power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source withstand voltage is 500V and the maximum leakage current is 40A, which is suitable for a variety of electrical environments. The device is based on Super Junction (SJ) multi-epitaxial technology and has a low on-resistance (80mΩ @ VGS=10V), which can effectively reduce energy loss and improve the overall efficiency of the system. It is widely used in power conversion and control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR32N50Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI
- **Model**: IXFR32N50Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFR32N50Q-VB is commonly used in high-efficiency switching power supply design, which can provide efficient energy conversion at high voltage, suitable for power adapters and industrial power supplies, and improve overall efficiency.
2. **Inverter**: In photovoltaic and other types of inverters, this MOSFET, as an important switching element, can provide stable performance during DC-AC conversion and ensure the reliability of the system under high load.
3. **Power electronic equipment**: Due to its high voltage and high current capabilities, IXFR32N50Q-VB is suitable for power electronic equipment such as power management systems and high-voltage power supplies, ensuring safe and stable operation in high-voltage environments.
4. **Motor drive**: This device can be used in motor drive systems, providing reliable current output, suitable for high-voltage motor control, and achieving efficient drive performance and system stability.
Through its superior performance, the IXFR32N50Q-VB is ideal for modern high-voltage power conversion and management in a wide range of power and industrial applications.
1. **Switching power supply**: IXFR32N50Q-VB is commonly used in high-efficiency switching power supply design, which can provide efficient energy conversion at high voltage, suitable for power adapters and industrial power supplies, and improve overall efficiency.
2. **Inverter**: In photovoltaic and other types of inverters, this MOSFET, as an important switching element, can provide stable performance during DC-AC conversion and ensure the reliability of the system under high load.
3. **Power electronic equipment**: Due to its high voltage and high current capabilities, IXFR32N50Q-VB is suitable for power electronic equipment such as power management systems and high-voltage power supplies, ensuring safe and stable operation in high-voltage environments.
4. **Motor drive**: This device can be used in motor drive systems, providing reliable current output, suitable for high-voltage motor control, and achieving efficient drive performance and system stability.
Through its superior performance, the IXFR32N50Q-VB is ideal for modern high-voltage power conversion and management in a wide range of power and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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