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IXFR26N60Q-VB Product details
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Product Introduction
**IXFR26N60Q-VB** is a high-voltage N-channel MOSFET in TO247 package with 650V withstand voltage, designed for high voltage applications. The device has a maximum leakage current of 20A, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. Its on-resistance is 160mΩ (at VGS=10V). Based on SJ_Multi-EPI technology, this MOSFET performs well in power management, switch control, and high-efficiency drive applications, and is suitable for a variety of industrial and consumer electronics products.
**IXFR26N60Q-VB** is a high-voltage N-channel MOSFET in TO247 package with 650V withstand voltage, designed for high voltage applications. The device has a maximum leakage current of 20A, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. Its on-resistance is 160mΩ (at VGS=10V). Based on SJ_Multi-EPI technology, this MOSFET performs well in power management, switch control, and high-efficiency drive applications, and is suitable for a variety of industrial and consumer electronics products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR26N60Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR26N60Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: IXFR26N60Q-VB is very suitable for high-voltage switching power supply (SMPS). As a switching element, it can efficiently control power conversion in high-voltage environments, improve the stability and efficiency of power supply, and is widely used in power adapters and power modules.
2. **Motor drive system**: This MOSFET can be used for motor control, especially in high-voltage applications, to provide stable current control and efficient energy transmission, suitable for driving various industrial and household motors.
3. **Uninterruptible power supply (UPS)**: IXFR26N60Q-VB is suitable for uninterruptible power supply systems, which can work efficiently under high voltage conditions to ensure continuous power supply to the system during power outages.
4. **Photovoltaic inverter**: In solar inverters, this MOSFET can be used for power conversion and control, supporting efficient energy management and improving the utilization efficiency of renewable energy.
The IXFR26N60Q-VB provides solutions in multiple fields requiring efficient energy conversion and current management through its high withstand voltage characteristics and low on-resistance, especially suitable for industrial and power management modules in high voltage environments.
1. **High-voltage switching power supply**: IXFR26N60Q-VB is very suitable for high-voltage switching power supply (SMPS). As a switching element, it can efficiently control power conversion in high-voltage environments, improve the stability and efficiency of power supply, and is widely used in power adapters and power modules.
2. **Motor drive system**: This MOSFET can be used for motor control, especially in high-voltage applications, to provide stable current control and efficient energy transmission, suitable for driving various industrial and household motors.
3. **Uninterruptible power supply (UPS)**: IXFR26N60Q-VB is suitable for uninterruptible power supply systems, which can work efficiently under high voltage conditions to ensure continuous power supply to the system during power outages.
4. **Photovoltaic inverter**: In solar inverters, this MOSFET can be used for power conversion and control, supporting efficient energy management and improving the utilization efficiency of renewable energy.
The IXFR26N60Q-VB provides solutions in multiple fields requiring efficient energy conversion and current management through its high withstand voltage characteristics and low on-resistance, especially suitable for industrial and power management modules in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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