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IXFR26N50-VB Product details
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Product Introduction: IXFR26N50-VB
IXFR26N50-VB is a high-performance single N-channel MOSFET in a TO247 package designed for high voltage applications. Its maximum drain-source voltage (VDS) is 500V and it can handle a leakage current of up to 40A. The device has a threshold voltage (Vth) of 3.8V and an on-resistance (RDS(ON)) of 80mΩ at VGS=10V. IXFR26N50-VB uses SJ_Multi-EPI technology, designed to provide high efficiency and excellent thermal management performance, suitable for a variety of high-voltage power conversion and control applications.
IXFR26N50-VB is a high-performance single N-channel MOSFET in a TO247 package designed for high voltage applications. Its maximum drain-source voltage (VDS) is 500V and it can handle a leakage current of up to 40A. The device has a threshold voltage (Vth) of 3.8V and an on-resistance (RDS(ON)) of 80mΩ at VGS=10V. IXFR26N50-VB uses SJ_Multi-EPI technology, designed to provide high efficiency and excellent thermal management performance, suitable for a variety of high-voltage power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFR26N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR26N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage switching power supply**:
The IXFR26N50-VB is ideal for high-voltage switching power supplies (SMPS) and DC-DC converters. These applications have strict requirements on the efficiency and reliability of the power supply, and this MOSFET can provide efficient power conversion with its low conduction loss.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element to handle high currents and effectively control the starting and speed regulation of the motor, suitable for drive applications in industrial automation, robots and electric vehicles.
3. **Inverter**:
The IXFR26N50-VB is suitable for photovoltaic inverters and other energy conversion devices, providing efficient switching performance in the process of converting DC power to AC power, ensuring system reliability and stability.
4. **Power Electronics**:
The device can also be used in power management modules of various power electronic devices, such as high-voltage power dispatchers and power distribution systems, where its high voltage and high current capabilities enable it to excel in a variety of high-voltage environments.
Through these application examples, the wide applicability of the IXFR26N50-VB in high-voltage power conversion and control and its reliable performance are demonstrated.
1. **High-voltage switching power supply**:
The IXFR26N50-VB is ideal for high-voltage switching power supplies (SMPS) and DC-DC converters. These applications have strict requirements on the efficiency and reliability of the power supply, and this MOSFET can provide efficient power conversion with its low conduction loss.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element to handle high currents and effectively control the starting and speed regulation of the motor, suitable for drive applications in industrial automation, robots and electric vehicles.
3. **Inverter**:
The IXFR26N50-VB is suitable for photovoltaic inverters and other energy conversion devices, providing efficient switching performance in the process of converting DC power to AC power, ensuring system reliability and stability.
4. **Power Electronics**:
The device can also be used in power management modules of various power electronic devices, such as high-voltage power dispatchers and power distribution systems, where its high voltage and high current capabilities enable it to excel in a variety of high-voltage environments.
Through these application examples, the wide applicability of the IXFR26N50-VB in high-voltage power conversion and control and its reliable performance are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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