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IXFR26N50Q-VB Product details
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Product Introduction
**IXFR26N50Q-VB** is a high-efficiency single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. Based on SJ_Multi-EPI technology, the device has excellent electrical characteristics and is suitable for applications requiring high voltage and medium current. Its maximum drain-source voltage is 500V, the maximum drain current reaches 40A, and it has a low on-resistance (80mΩ@VGS=10V), making it excellent in various power electronics applications.
**IXFR26N50Q-VB** is a high-efficiency single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. Based on SJ_Multi-EPI technology, the device has excellent electrical characteristics and is suitable for applications requiring high voltage and medium current. Its maximum drain-source voltage is 500V, the maximum drain current reaches 40A, and it has a low on-resistance (80mΩ@VGS=10V), making it excellent in various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR26N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFR26N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power conversion**: IXFR26N50Q-VB is widely used in high-voltage power converters, including AC-DC power supplies and DC-DC converters, and can efficiently handle power conversion to meet the high efficiency and stability requirements in power supply design.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control, providing high voltage and medium current drive capabilities to ensure the stability and reliability of motor operation.
3. **Industrial control systems**: In industrial automation and control systems, IXFR26N50Q-VB is used for high-voltage switches and power management modules, which can meet the needs of various industrial applications for high-performance components.
4. **Renewable energy**: The device is also widely used in solar inverters and wind energy conversion systems to ensure the efficient conversion and utilization of renewable energy.
5. **Consumer Electronics**: IXFR26N50Q-VB can also be used for high-voltage LED drivers and power adapters, providing reliable switching performance and high current capabilities to meet the needs of modern electronic devices.
With its excellent electrical performance and high reliability, IXFR26N50Q-VB is an ideal choice for a variety of high-voltage applications and can effectively meet the needs in different application scenarios.
1. **Power conversion**: IXFR26N50Q-VB is widely used in high-voltage power converters, including AC-DC power supplies and DC-DC converters, and can efficiently handle power conversion to meet the high efficiency and stability requirements in power supply design.
2. **Motor drive**: This MOSFET is suitable for motor drive systems, especially in inverters and motor control, providing high voltage and medium current drive capabilities to ensure the stability and reliability of motor operation.
3. **Industrial control systems**: In industrial automation and control systems, IXFR26N50Q-VB is used for high-voltage switches and power management modules, which can meet the needs of various industrial applications for high-performance components.
4. **Renewable energy**: The device is also widely used in solar inverters and wind energy conversion systems to ensure the efficient conversion and utilization of renewable energy.
5. **Consumer Electronics**: IXFR26N50Q-VB can also be used for high-voltage LED drivers and power adapters, providing reliable switching performance and high current capabilities to meet the needs of modern electronic devices.
With its excellent electrical performance and high reliability, IXFR26N50Q-VB is an ideal choice for a variety of high-voltage applications and can effectively meet the needs in different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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