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IXFR24N80P-VB Product details
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Product Introduction
IXFR24N80P-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, suitable for a wide range of high voltage power supplies and conversion applications. The gate-source voltage (VGS) range of the device is ±30V, and the turn-on voltage threshold (Vth) is 3.5V. Its on-resistance (RDS(ON)) at a gate voltage of 10V is 370mΩ, and the maximum drain current (ID) is 15A. IXFR24N80P-VB uses SJ_Multi-EPI technology, providing excellent switching characteristics and thermal performance, and is very suitable for high power applications.
IXFR24N80P-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, suitable for a wide range of high voltage power supplies and conversion applications. The gate-source voltage (VGS) range of the device is ±30V, and the turn-on voltage threshold (Vth) is 3.5V. Its on-resistance (RDS(ON)) at a gate voltage of 10V is 370mΩ, and the maximum drain current (ID) is 15A. IXFR24N80P-VB uses SJ_Multi-EPI technology, providing excellent switching characteristics and thermal performance, and is very suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR24N80P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 370mΩ
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR24N80P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 370mΩ
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage power conversion**: IXFR24N80P-VB is very suitable for high-voltage AC-DC power supplies and DC-DC converters. It can efficiently handle 800V input voltage and is suitable for industrial power supplies and power conversion modules to improve energy conversion efficiency.
2. **Lighting drive system**: This MOSFET can be widely used in high-voltage lighting systems, such as LED drivers and high-intensity discharge (HID) lamps, to provide stable current and high-voltage support for these devices, ensuring high efficiency and reliability of lighting systems.
3. **Motor control**: IXFR24N80P-VB is suitable for motor drive systems, such as motor control of power tools and industrial machinery, and can handle high voltage and high-power loads to ensure efficient operation and reliability of motors.
4. **Battery management system**: In electric vehicles and energy storage systems, this MOSFET can be used for battery management to optimize the battery charging and discharging process. Its high voltage capability and stability help improve battery performance and safety, making it suitable for use in large energy storage systems and power management for electric vehicles.
Through these examples, the high voltage and high current characteristics of the IXFR24N80P-VB make it an ideal choice for multiple high voltage applications.
1. **High-voltage power conversion**: IXFR24N80P-VB is very suitable for high-voltage AC-DC power supplies and DC-DC converters. It can efficiently handle 800V input voltage and is suitable for industrial power supplies and power conversion modules to improve energy conversion efficiency.
2. **Lighting drive system**: This MOSFET can be widely used in high-voltage lighting systems, such as LED drivers and high-intensity discharge (HID) lamps, to provide stable current and high-voltage support for these devices, ensuring high efficiency and reliability of lighting systems.
3. **Motor control**: IXFR24N80P-VB is suitable for motor drive systems, such as motor control of power tools and industrial machinery, and can handle high voltage and high-power loads to ensure efficient operation and reliability of motors.
4. **Battery management system**: In electric vehicles and energy storage systems, this MOSFET can be used for battery management to optimize the battery charging and discharging process. Its high voltage capability and stability help improve battery performance and safety, making it suitable for use in large energy storage systems and power management for electric vehicles.
Through these examples, the high voltage and high current characteristics of the IXFR24N80P-VB make it an ideal choice for multiple high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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