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IXFR20N80P-VB Product details
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Product Introduction
**IXFR20N80P-VB** is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 800V and the maximum drain current (ID) is 15A. With a low on-resistance (RDS(ON)) of 370mΩ at a gate-source voltage of 10V, the device excels in power loss and thermal management. Using advanced SJ_Multi-EPI technology, the IXFR20N80P-VB is very suitable for high-frequency switching applications, ensuring high efficiency and reliability, and is widely used in power electronic equipment.
**IXFR20N80P-VB** is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 800V and the maximum drain current (ID) is 15A. With a low on-resistance (RDS(ON)) of 370mΩ at a gate-source voltage of 10V, the device excels in power loss and thermal management. Using advanced SJ_Multi-EPI technology, the IXFR20N80P-VB is very suitable for high-frequency switching applications, ensuring high efficiency and reliability, and is widely used in power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR20N80P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR20N80P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage switching power supply**: IXFR20N80P-VB is very suitable for high-voltage switching power supply design, which can effectively handle high voltage and high-power loads. It is widely used in industrial power supplies and communication equipment to improve the overall efficiency of power supplies.
2. **Motor control**: In motor drive applications, this MOSFET can stably control brushless DC motors and stepper motors, suitable for various power tools, robots and automation equipment, ensuring smooth current regulation.
3. **Photovoltaic inverter**: IXFR20N80P-VB is suitable for photovoltaic inverters and other power conversion systems. It can efficiently convert DC power into AC power. It is widely used in the field of renewable energy and improves the overall performance of the system.
4. **Battery management system**: In battery charge and discharge management, this device can efficiently control the flow of current to ensure the safety and performance of the battery. It is suitable for electric vehicles and energy storage systems, providing reliable current control solutions.
Overall, the IXFR20N80P-VB has a wide range of application potentials in power management, motor control, and renewable energy systems due to its high voltage and medium current characteristics. It is an ideal choice for high-efficiency power electronics design.
1. **High-voltage switching power supply**: IXFR20N80P-VB is very suitable for high-voltage switching power supply design, which can effectively handle high voltage and high-power loads. It is widely used in industrial power supplies and communication equipment to improve the overall efficiency of power supplies.
2. **Motor control**: In motor drive applications, this MOSFET can stably control brushless DC motors and stepper motors, suitable for various power tools, robots and automation equipment, ensuring smooth current regulation.
3. **Photovoltaic inverter**: IXFR20N80P-VB is suitable for photovoltaic inverters and other power conversion systems. It can efficiently convert DC power into AC power. It is widely used in the field of renewable energy and improves the overall performance of the system.
4. **Battery management system**: In battery charge and discharge management, this device can efficiently control the flow of current to ensure the safety and performance of the battery. It is suitable for electric vehicles and energy storage systems, providing reliable current control solutions.
Overall, the IXFR20N80P-VB has a wide range of application potentials in power management, motor control, and renewable energy systems due to its high voltage and medium current characteristics. It is an ideal choice for high-efficiency power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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