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IXFR18N90P-VB Product details
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IXFR18N90P-VB Product Introduction
The IXFR18N90P-VB is a high voltage power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source withstand voltage of up to 900V and a maximum drain current of up to 11A, it is suitable for electrical environments that require high reliability and high efficiency. Based on SJ_Multi-EPI technology, the device has a low on-resistance (580mΩ @ VGS=10V), effectively reducing energy loss and improving system performance. It is widely used in power conversion, inverters and other high voltage applications.
The IXFR18N90P-VB is a high voltage power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source withstand voltage of up to 900V and a maximum drain current of up to 11A, it is suitable for electrical environments that require high reliability and high efficiency. Based on SJ_Multi-EPI technology, the device has a low on-resistance (580mΩ @ VGS=10V), effectively reducing energy loss and improving system performance. It is widely used in power conversion, inverters and other high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 11A | 580mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR18N90P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 580mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: Super Junction (SJ) Multi-EPI
- **Model**: IXFR18N90P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 580mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: Super Junction (SJ) Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFR18N90P-VB is commonly used in high-voltage switching power supply design, capable of providing efficient energy conversion at high voltage, suitable for various industrial and household power adapters, and improving the overall efficiency of the power supply.
2. **Inverter**: In photovoltaic and other types of inverters, this MOSFET can be used for DC-AC conversion, providing stable switching performance, ensuring reliability under high load conditions, and supporting the effective use of renewable energy.
3. **Power electronic equipment**: Due to its high voltage capability, IXFR18N90P-VB is suitable for power electronic equipment such as high-voltage power supplies and power metering equipment, which can handle high voltage and high current to ensure safe operation of the equipment.
4. **Motor drive**: The device can also be used in motor drive systems, capable of providing stable current output, suitable for high-voltage motor control, ensuring efficient drive performance and system stability.
Through its superior performance and wide range of applications, the IXFR18N90P-VB becomes an essential component for modern high-voltage power conversion and management, suitable for a variety of power and industrial applications.
1. **Switching power supply**: IXFR18N90P-VB is commonly used in high-voltage switching power supply design, capable of providing efficient energy conversion at high voltage, suitable for various industrial and household power adapters, and improving the overall efficiency of the power supply.
2. **Inverter**: In photovoltaic and other types of inverters, this MOSFET can be used for DC-AC conversion, providing stable switching performance, ensuring reliability under high load conditions, and supporting the effective use of renewable energy.
3. **Power electronic equipment**: Due to its high voltage capability, IXFR18N90P-VB is suitable for power electronic equipment such as high-voltage power supplies and power metering equipment, which can handle high voltage and high current to ensure safe operation of the equipment.
4. **Motor drive**: The device can also be used in motor drive systems, capable of providing stable current output, suitable for high-voltage motor control, ensuring efficient drive performance and system stability.
Through its superior performance and wide range of applications, the IXFR18N90P-VB becomes an essential component for modern high-voltage power conversion and management, suitable for a variety of power and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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