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IXFR180N10-VB Product details
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Product Introduction: IXFR180N10-VB
IXFR180N10-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and low voltage applications. The device has a maximum drain-source voltage (VDS) of 100V and can handle leakage currents up to 150A. Its threshold voltage (Vth) is 3V, and it has an extremely low on-resistance (RDS(ON)) of only 6mΩ at VGS=10V. IXFR180N10-VB uses Trench technology to ensure excellent switching performance and thermal management capabilities, making it ideal for high-frequency and high-power applications.
IXFR180N10-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and low voltage applications. The device has a maximum drain-source voltage (VDS) of 100V and can handle leakage currents up to 150A. Its threshold voltage (Vth) is 3V, and it has an extremely low on-resistance (RDS(ON)) of only 6mΩ at VGS=10V. IXFR180N10-VB uses Trench technology to ensure excellent switching performance and thermal management capabilities, making it ideal for high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFR180N10-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Model**: IXFR180N10-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples:
1. **Power management system**:
The IXFR180N10-VB is ideal for efficient power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce energy losses and improve overall conversion efficiency, making it suitable for a variety of power module applications.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element for high-power motor drivers. With its high current capability and low on-resistance, the IXFR180N10-VB can meet the needs of fast startup and speed regulation, and is suitable for industrial automation and electric vehicle drives.
3. **High-frequency switching applications**:
The IXFR180N10-VB performs well in high-frequency applications and is suitable for use in RF power amplifiers and wireless communication equipment. It can efficiently support high-frequency switching operations to ensure signal transmission quality and stability.
4. **Renewable Energy Systems**:
The device can also be used in photovoltaic inverters and wind power generation systems to help convert DC power to AC power for use in the power grid or loads. Its high efficiency and reliability ensure stable operation in various environments.
Through these application examples, the wide applicability and excellent performance of the IXFR180N10-VB in low-voltage, high-current electronic devices are demonstrated.
1. **Power management system**:
The IXFR180N10-VB is ideal for efficient power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce energy losses and improve overall conversion efficiency, making it suitable for a variety of power module applications.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element for high-power motor drivers. With its high current capability and low on-resistance, the IXFR180N10-VB can meet the needs of fast startup and speed regulation, and is suitable for industrial automation and electric vehicle drives.
3. **High-frequency switching applications**:
The IXFR180N10-VB performs well in high-frequency applications and is suitable for use in RF power amplifiers and wireless communication equipment. It can efficiently support high-frequency switching operations to ensure signal transmission quality and stability.
4. **Renewable Energy Systems**:
The device can also be used in photovoltaic inverters and wind power generation systems to help convert DC power to AC power for use in the power grid or loads. Its high efficiency and reliability ensure stable operation in various environments.
Through these application examples, the wide applicability and excellent performance of the IXFR180N10-VB in low-voltage, high-current electronic devices are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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