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IXFR180N06-VB Product details
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Product Introduction
IXFR180N06-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power conversion and drive circuits. The gate-source voltage (VGS) range of the device is ±20V, and the turn-on voltage threshold (Vth) is 3.5V. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 4mΩ, and at a gate voltage of 10V it is 2.8mΩ, and the maximum drain current (ID) can reach 215A. IXFR180N06-VB uses Trench technology, with excellent switching performance and low power consumption characteristics, suitable for high frequency and high efficiency applications.
IXFR180N06-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, suitable for a variety of power conversion and drive circuits. The gate-source voltage (VGS) range of the device is ±20V, and the turn-on voltage threshold (Vth) is 3.5V. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 4mΩ, and at a gate voltage of 10V it is 2.8mΩ, and the maximum drain current (ID) can reach 215A. IXFR180N06-VB uses Trench technology, with excellent switching performance and low power consumption characteristics, suitable for high frequency and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR180N06-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=4.5V)**: 4mΩ
- **On-resistance (RDS(ON) @ VGS=10V)**: 2.8mΩ
- **Maximum drain current (ID)**: 215A
- **Technology**: Trench
- **Model**: IXFR180N06-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=4.5V)**: 4mΩ
- **On-resistance (RDS(ON) @ VGS=10V)**: 2.8mΩ
- **Maximum drain current (ID)**: 215A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **High-efficiency switching power supply**: The IXFR180N06-VB is ideal for high-efficiency switching power supply designs, including DC-DC converters and AC-DC power supplies. In these applications, its low on-resistance can effectively reduce switching losses and improve overall system efficiency, and is particularly suitable for power adapters and power modules.
2. **Motor drive**: This MOSFET can provide strong current support for motor control systems and is suitable for driving power tools, household appliances, and industrial automation equipment. This high current characteristic ensures stable operation under high load conditions and improves the performance and response speed of the motor.
3. **Battery management system**: In electric vehicles and energy storage systems, the IXFR180N06-VB can be used for battery management, optimizing the battery charging and discharging process, and ensuring battery performance and safety. Its fast switching capability helps achieve efficient energy transmission and management.
4. **Power Inverters**: The device is also very suitable for power inverters, such as solar inverters and UPS systems, and can effectively handle high-frequency switching and load changes, improving the overall efficiency and stability of the inverter.
Through these application examples, the high current handling capability and low voltage characteristics of the IXFR180N06-VB make it an ideal solution in multiple fields.
1. **High-efficiency switching power supply**: The IXFR180N06-VB is ideal for high-efficiency switching power supply designs, including DC-DC converters and AC-DC power supplies. In these applications, its low on-resistance can effectively reduce switching losses and improve overall system efficiency, and is particularly suitable for power adapters and power modules.
2. **Motor drive**: This MOSFET can provide strong current support for motor control systems and is suitable for driving power tools, household appliances, and industrial automation equipment. This high current characteristic ensures stable operation under high load conditions and improves the performance and response speed of the motor.
3. **Battery management system**: In electric vehicles and energy storage systems, the IXFR180N06-VB can be used for battery management, optimizing the battery charging and discharging process, and ensuring battery performance and safety. Its fast switching capability helps achieve efficient energy transmission and management.
4. **Power Inverters**: The device is also very suitable for power inverters, such as solar inverters and UPS systems, and can effectively handle high-frequency switching and load changes, improving the overall efficiency and stability of the inverter.
Through these application examples, the high current handling capability and low voltage characteristics of the IXFR180N06-VB make it an ideal solution in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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