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IXFR15N80Q-VB Product details
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IXFR15N80Q-VB Product Introduction
The IXFR15N80Q-VB is a high-performance N-channel MOSFET in a TO247 package designed for high-voltage applications. With a rated drain-source voltage (VDS) of up to 800V and a maximum drain current (ID) of 11A, it is suitable for use in applications requiring high voltage and medium current. The device uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 500mΩ@VGS=10V), which excels in high performance and reliability, making it an ideal choice for modern power electronic systems.
The IXFR15N80Q-VB is a high-performance N-channel MOSFET in a TO247 package designed for high-voltage applications. With a rated drain-source voltage (VDS) of up to 800V and a maximum drain current (ID) of 11A, it is suitable for use in applications requiring high voltage and medium current. The device uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 500mΩ@VGS=10V), which excels in high performance and reliability, making it an ideal choice for modern power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR15N80Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFR15N80Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: IXFR15N80Q-VB is suitable for the main switching element in high-voltage switching power supplies, can effectively realize DC-DC conversion, ensure high efficiency and low power consumption, and is widely used in power adapters and industrial power supplies.
2. **Inverter**: This MOSFET can be used in photovoltaic inverters and wind power inverters to convert high-voltage DC to AC, support efficient conversion of renewable energy systems, and improve the overall performance of the system.
3. **Motor Drive**: In motor control systems, IXFR15N80Q-VB can be used as a drive device, suitable for high-voltage applications, and can support motor starting and precise speed regulation.
4. **Uninterruptible Power Supply (UPS)**: IXFR15N80Q-VB can provide stable power switching in UPS systems, ensuring power supply to key equipment during power outages and ensuring continuous operation of equipment.
5. **LED drive circuit**: In high-voltage LED drive applications, the device can be used as a power switch to help regulate and control the current of high-voltage LED lamps, suitable for commercial and industrial lighting.
With its excellent high voltage and low conduction loss characteristics, the IXFR15N80Q-VB is an ideal choice for a variety of applications in the field of power electronics, supporting high-efficiency power management and power conversion solutions.
1. **Switching Power Supply (SMPS)**: IXFR15N80Q-VB is suitable for the main switching element in high-voltage switching power supplies, can effectively realize DC-DC conversion, ensure high efficiency and low power consumption, and is widely used in power adapters and industrial power supplies.
2. **Inverter**: This MOSFET can be used in photovoltaic inverters and wind power inverters to convert high-voltage DC to AC, support efficient conversion of renewable energy systems, and improve the overall performance of the system.
3. **Motor Drive**: In motor control systems, IXFR15N80Q-VB can be used as a drive device, suitable for high-voltage applications, and can support motor starting and precise speed regulation.
4. **Uninterruptible Power Supply (UPS)**: IXFR15N80Q-VB can provide stable power switching in UPS systems, ensuring power supply to key equipment during power outages and ensuring continuous operation of equipment.
5. **LED drive circuit**: In high-voltage LED drive applications, the device can be used as a power switch to help regulate and control the current of high-voltage LED lamps, suitable for commercial and industrial lighting.
With its excellent high voltage and low conduction loss characteristics, the IXFR15N80Q-VB is an ideal choice for a variety of applications in the field of power electronics, supporting high-efficiency power management and power conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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