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IXFR150N15-VB Product details
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IXFR150N15-VB Product Introduction
The IXFR150N15-VB is a high-performance N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage is 150V and the leakage current can reach 150A. The device uses Trench technology and has extremely low on-resistance (12mΩ @ VGS=10V), which can achieve excellent switching performance and thermal management capabilities under high load conditions, making it very suitable for various power management and drive systems.
The IXFR150N15-VB is a high-performance N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage is 150V and the leakage current can reach 150A. The device uses Trench technology and has extremely low on-resistance (12mΩ @ VGS=10V), which can achieve excellent switching performance and thermal management capabilities under high load conditions, making it very suitable for various power management and drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFR150N15-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 150V
- **VGS (Gate-source voltage)**: ±20V
- **Vth (Threshold voltage)**: 3V
- **RDS(ON) (On-resistance)**: 12mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 150A
- **Technology**: Trench
- **Model**: IXFR150N15-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 150V
- **VGS (Gate-source voltage)**: ±20V
- **Vth (Threshold voltage)**: 3V
- **RDS(ON) (On-resistance)**: 12mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supply (SMPS)**:
The IXFR150N15-VB is ideal for switching power supply designs, especially where high efficiency and high current carrying capacity are required. Its low on-resistance significantly reduces power loss under high load conditions and is widely used in power adapters and industrial power modules.
2. **Motor Drive**:
This MOSFET can be used in motor drive systems to provide stable current control. Due to its high current carrying capacity and low heat loss, it is suitable for use in motor controllers and servo drives to improve the efficiency and performance of motors.
3. **Battery Management System**:
In battery management systems, the IXFR150N15-VB can be used for efficient charge and discharge control to ensure safe and efficient operation of battery packs. Suitable for electric vehicles and renewable energy storage systems, it can provide precise control under dynamic load conditions.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, IXFR150N15-VB can be used as an efficient switching element to ensure fast switching in the event of a power failure, provide stable backup power, and improve system reliability.
5. **High-frequency converter**:
This MOSFET can be applied to high-frequency DC-DC converters, and can provide excellent switching performance under high-frequency working conditions. It is suitable for various converter and inverter designs and meets the high-performance requirements of modern power electronic equipment.
Through these application examples, IXFR150N15-VB demonstrates its wide applicability in multiple high-current and high-efficiency demand scenarios, and can provide reliable performance support for power management and control systems.
1. **Switching Power Supply (SMPS)**:
The IXFR150N15-VB is ideal for switching power supply designs, especially where high efficiency and high current carrying capacity are required. Its low on-resistance significantly reduces power loss under high load conditions and is widely used in power adapters and industrial power modules.
2. **Motor Drive**:
This MOSFET can be used in motor drive systems to provide stable current control. Due to its high current carrying capacity and low heat loss, it is suitable for use in motor controllers and servo drives to improve the efficiency and performance of motors.
3. **Battery Management System**:
In battery management systems, the IXFR150N15-VB can be used for efficient charge and discharge control to ensure safe and efficient operation of battery packs. Suitable for electric vehicles and renewable energy storage systems, it can provide precise control under dynamic load conditions.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, IXFR150N15-VB can be used as an efficient switching element to ensure fast switching in the event of a power failure, provide stable backup power, and improve system reliability.
5. **High-frequency converter**:
This MOSFET can be applied to high-frequency DC-DC converters, and can provide excellent switching performance under high-frequency working conditions. It is suitable for various converter and inverter designs and meets the high-performance requirements of modern power electronic equipment.
Through these application examples, IXFR150N15-VB demonstrates its wide applicability in multiple high-current and high-efficiency demand scenarios, and can provide reliable performance support for power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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