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IXFQ14N80P-VB Product details
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IXFQ14N80P-VB Product Introduction
IXFQ14N80P-VB is a high-voltage power MOSFET, using TO3P package, designed for demanding high-voltage application scenarios, with extremely high reliability and durability. Its drain-source withstand voltage is 800V, and the maximum leakage current is 11A. Based on Super Junction (SJ) multi-epitaxial technology (Multi-EPI), the device provides a lower on-resistance (500mΩ @ VGS=10V), which can effectively reduce energy loss and improve system efficiency. It is widely used in power conversion, switching equipment and high-voltage circuits.
IXFQ14N80P-VB is a high-voltage power MOSFET, using TO3P package, designed for demanding high-voltage application scenarios, with extremely high reliability and durability. Its drain-source withstand voltage is 800V, and the maximum leakage current is 11A. Based on Super Junction (SJ) multi-epitaxial technology (Multi-EPI), the device provides a lower on-resistance (500mΩ @ VGS=10V), which can effectively reduce energy loss and improve system efficiency. It is widely used in power conversion, switching equipment and high-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXFQ14N80P-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: Super Junction (SJ) Multi-EPI
- **Model**: IXFQ14N80P-VB
- **Package**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: Super Junction (SJ) Multi-EPI
Domain and module applications：
Applications and module examples
1. **Industrial-grade switching power supply**: IXFQ14N80P-VB is commonly used in high-voltage switching power supply equipment. Due to its 800V withstand voltage, it can effectively cope with the conversion of high-voltage input and output. It can provide efficient power transmission and control in power equipment and industrial power supplies, and is suitable for high-power power adapters and communication power supplies.
2. **High-voltage inverter**: In photovoltaic inverters and high-voltage electrical equipment, this MOSFET can be used for DC-AC conversion applications, providing stable switching performance to ensure efficient operation of the inverter.
3. **Power grid management**: Due to the high voltage and current capabilities of IXFQ14N80P-VB, it is suitable for grid management equipment, such as high-voltage meters and power metering equipment, to ensure reliable operation of equipment in high-voltage environments.
4. **Lighting control system**: This MOSFET performs well in high-voltage lighting systems, especially in LED lighting control and energy-saving equipment, which can effectively improve power conversion efficiency and reduce energy loss.
In short, the IXFQ14N80P-VB performs well in the field of high-voltage power conversion and management, and is particularly suitable for industrial and power system modules that require high efficiency and high reliability.
1. **Industrial-grade switching power supply**: IXFQ14N80P-VB is commonly used in high-voltage switching power supply equipment. Due to its 800V withstand voltage, it can effectively cope with the conversion of high-voltage input and output. It can provide efficient power transmission and control in power equipment and industrial power supplies, and is suitable for high-power power adapters and communication power supplies.
2. **High-voltage inverter**: In photovoltaic inverters and high-voltage electrical equipment, this MOSFET can be used for DC-AC conversion applications, providing stable switching performance to ensure efficient operation of the inverter.
3. **Power grid management**: Due to the high voltage and current capabilities of IXFQ14N80P-VB, it is suitable for grid management equipment, such as high-voltage meters and power metering equipment, to ensure reliable operation of equipment in high-voltage environments.
4. **Lighting control system**: This MOSFET performs well in high-voltage lighting systems, especially in LED lighting control and energy-saving equipment, which can effectively improve power conversion efficiency and reduce energy loss.
In short, the IXFQ14N80P-VB performs well in the field of high-voltage power conversion and management, and is particularly suitable for industrial and power system modules that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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