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IXFQ12N80P-VB Product details
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Product Introduction
**IXFQ12N80P-VB** is a high-voltage N-channel MOSFET in TO3P package with 800V withstand voltage, suitable for high-voltage application scenarios. The device has a maximum drain current of 11A, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. Its on-resistance is 500mΩ (at VGS=10V). Based on SJ_Multi-EPI technology, this MOSFET performs well in power management, conversion, and high-efficiency switching applications, and is suitable for a variety of industrial and consumer electronics products.
**IXFQ12N80P-VB** is a high-voltage N-channel MOSFET in TO3P package with 800V withstand voltage, suitable for high-voltage application scenarios. The device has a maximum drain current of 11A, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. Its on-resistance is 500mΩ (at VGS=10V). Based on SJ_Multi-EPI technology, this MOSFET performs well in power management, conversion, and high-efficiency switching applications, and is suitable for a variety of industrial and consumer electronics products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: IXFQ12N80P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFQ12N80P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: The IXFQ12N80P-VB is ideal for use in high-voltage switching power supplies (SMPS), especially in scenarios where high voltage handling and efficient power conversion are required. It can improve the reliability and energy efficiency of the system and is suitable for high-power power supply equipment.
2. **Industrial motor drive**: This MOSFET is suitable for industrial motor control, especially drive applications that require high voltage and high power handling capabilities. In industrial automation and mechanical equipment, it can provide stable current control and power transmission.
3. **Lighting system**: Due to its high withstand voltage characteristics, the IXFQ12N80P-VB can be used in LED driver circuits, especially those used in high-brightness and high-efficiency lighting systems, ensuring efficient and stable lighting output.
4. **Uninterruptible Power Supply (UPS) and Inverter**: This MOSFET is also widely used in UPS systems and solar inverters, supporting high voltage input and stable power conversion, ensuring stable operation of equipment under high voltage environment.
IXFQ12N80P-VB provides solutions in many fields requiring efficient energy conversion and current management through its high withstand voltage characteristics and low on-resistance, especially suitable for industrial and power management modules requiring high voltage operation.
1. **High-voltage switching power supply**: The IXFQ12N80P-VB is ideal for use in high-voltage switching power supplies (SMPS), especially in scenarios where high voltage handling and efficient power conversion are required. It can improve the reliability and energy efficiency of the system and is suitable for high-power power supply equipment.
2. **Industrial motor drive**: This MOSFET is suitable for industrial motor control, especially drive applications that require high voltage and high power handling capabilities. In industrial automation and mechanical equipment, it can provide stable current control and power transmission.
3. **Lighting system**: Due to its high withstand voltage characteristics, the IXFQ12N80P-VB can be used in LED driver circuits, especially those used in high-brightness and high-efficiency lighting systems, ensuring efficient and stable lighting output.
4. **Uninterruptible Power Supply (UPS) and Inverter**: This MOSFET is also widely used in UPS systems and solar inverters, supporting high voltage input and stable power conversion, ensuring stable operation of equipment under high voltage environment.
IXFQ12N80P-VB provides solutions in many fields requiring efficient energy conversion and current management through its high withstand voltage characteristics and low on-resistance, especially suitable for industrial and power management modules requiring high voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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