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IXFQ10N80P-VB Product details
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Product Introduction: IXFQ10N80P-VB
IXFQ10N80P-VB is a single N-channel MOSFET in a TO3P package, designed for high-voltage applications, capable of handling a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 500mΩ at VGS=10V. Based on superjunction (SJ) and multi-epitaxial (Multi-EPI) technologies, the device can provide low conduction losses and efficient power conversion, and is suitable for a variety of high-voltage power application scenarios.
IXFQ10N80P-VB is a single N-channel MOSFET in a TO3P package, designed for high-voltage applications, capable of handling a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 500mΩ at VGS=10V. Based on superjunction (SJ) and multi-epitaxial (Multi-EPI) technologies, the device can provide low conduction losses and efficient power conversion, and is suitable for a variety of high-voltage power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model**: IXFQ10N80P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFQ10N80P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power management**:
The IXFQ10N80P-VB is ideal for use in switch mode power supplies (SMPS) and high-voltage DC-DC converters. These applications require high VDS and low RDS(ON) to improve efficiency and reduce power consumption, and the performance of this MOSFET under high voltage conditions makes it an ideal switching element in these systems.
2. **Inverter and motor drive**:
This device is suitable for use in high-voltage inverter and motor drive systems. Its high withstand voltage capability of 800V and low on-resistance ensure that current can be effectively controlled in the motor drive circuit to ensure reliable operation of the system.
3. **Solar photovoltaic inverter**:
In solar photovoltaic systems, the IXFQ10N80P-VB can be used in high-voltage inverter modules to help convert DC power to AC power. Its super junction technology can effectively improve conversion efficiency and reduce heat loss, making it suitable for high-voltage photovoltaic systems.
4. **Industrial Power Equipment**:
This MOSFET has important applications in power management and distributed power systems of industrial equipment, especially in situations where high voltage processing is required, such as power transmission equipment and power conditioners, to ensure the safety and reliability of equipment in high voltage environments.
The design of the IXFQ10N80P-VB enables it to perform well in high-voltage power conversion and power regulation modules, and is suitable for applications in multiple high-voltage fields.
1. **High-voltage power management**:
The IXFQ10N80P-VB is ideal for use in switch mode power supplies (SMPS) and high-voltage DC-DC converters. These applications require high VDS and low RDS(ON) to improve efficiency and reduce power consumption, and the performance of this MOSFET under high voltage conditions makes it an ideal switching element in these systems.
2. **Inverter and motor drive**:
This device is suitable for use in high-voltage inverter and motor drive systems. Its high withstand voltage capability of 800V and low on-resistance ensure that current can be effectively controlled in the motor drive circuit to ensure reliable operation of the system.
3. **Solar photovoltaic inverter**:
In solar photovoltaic systems, the IXFQ10N80P-VB can be used in high-voltage inverter modules to help convert DC power to AC power. Its super junction technology can effectively improve conversion efficiency and reduce heat loss, making it suitable for high-voltage photovoltaic systems.
4. **Industrial Power Equipment**:
This MOSFET has important applications in power management and distributed power systems of industrial equipment, especially in situations where high voltage processing is required, such as power transmission equipment and power conditioners, to ensure the safety and reliability of equipment in high voltage environments.
The design of the IXFQ10N80P-VB enables it to perform well in high-voltage power conversion and power regulation modules, and is suitable for applications in multiple high-voltage fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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