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IXFP20N50P3M-VB Product details
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IXFP20N50P3M-VB Product Introduction
The IXFP20N50P3M-VB is a high-performance N-channel MOSFET in a TO220F package designed for high voltage and medium current applications. With a rated drain-source voltage of 650V and a maximum drain current of 20A, the device is ideal for use in power management, inverters, and other high-efficiency applications. Utilizing SJ_Multi-EPI technology, the IXFP20N50P3M-VB has high voltage withstand capability and relatively low on-resistance (RDS(ON) = 160mΩ@VGS=10V), providing excellent performance for a variety of power electronics applications.
The IXFP20N50P3M-VB is a high-performance N-channel MOSFET in a TO220F package designed for high voltage and medium current applications. With a rated drain-source voltage of 650V and a maximum drain current of 20A, the device is ideal for use in power management, inverters, and other high-efficiency applications. Utilizing SJ_Multi-EPI technology, the IXFP20N50P3M-VB has high voltage withstand capability and relatively low on-resistance (RDS(ON) = 160mΩ@VGS=10V), providing excellent performance for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IXFP20N50P3M-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFP20N50P3M-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The IXFP20N50P3M-VB is ideal for high voltage switching power supplies and is widely used in power adapters and industrial power supplies. Its high withstand voltage characteristics and low conduction losses ensure high efficiency and stability of the power supply.
2. **Inverter**: This MOSFET performs well in photovoltaic and wind power inverters, and can effectively convert DC power into AC power. It is widely used in renewable energy systems to improve the overall efficiency of the system.
3. **Motor Control**: The IXFP20N50P3M-VB can be used in medium voltage motor drive systems, supporting the starting and precise control of high current motors, and is suitable for industrial equipment and automation systems.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this device plays a key role in managing high voltage currents, ensuring stable power support when power is interrupted, and protecting the safety of important equipment.
5. **Power Management IC**: IXFP20N50P3M-VB can be used as a switching device in the power management integrated circuit to improve the system's response speed and overall performance, and is suitable for a variety of high-efficiency power solutions.
With its excellent current handling capability and high voltage resistance performance, the IXFP20N50P3M-VB is an ideal choice for meeting the needs of a variety of high-voltage applications in modern power electronics systems.
1. **Switching Power Supply (SMPS)**: The IXFP20N50P3M-VB is ideal for high voltage switching power supplies and is widely used in power adapters and industrial power supplies. Its high withstand voltage characteristics and low conduction losses ensure high efficiency and stability of the power supply.
2. **Inverter**: This MOSFET performs well in photovoltaic and wind power inverters, and can effectively convert DC power into AC power. It is widely used in renewable energy systems to improve the overall efficiency of the system.
3. **Motor Control**: The IXFP20N50P3M-VB can be used in medium voltage motor drive systems, supporting the starting and precise control of high current motors, and is suitable for industrial equipment and automation systems.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this device plays a key role in managing high voltage currents, ensuring stable power support when power is interrupted, and protecting the safety of important equipment.
5. **Power Management IC**: IXFP20N50P3M-VB can be used as a switching device in the power management integrated circuit to improve the system's response speed and overall performance, and is suitable for a variety of high-efficiency power solutions.
With its excellent current handling capability and high voltage resistance performance, the IXFP20N50P3M-VB is an ideal choice for meeting the needs of a variety of high-voltage applications in modern power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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