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IXFH9N80-VB Product details
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Product Introduction
**IXFH9N80-VB** is a high voltage N-channel MOSFET in a TO247 package designed for high voltage power electronics applications. Its maximum drain-source voltage (VDS) is 800V, making it an excellent performer in high voltage environments. The device has an on-resistance (RDS(ON)) of 500mΩ (@VGS = 10V), providing stable performance at a maximum drain current of up to 11A. The IXFH9N80-VB uses SJ_Multi-EPI technology to ensure superior thermal and electrical properties for a wide range of industrial applications.
**IXFH9N80-VB** is a high voltage N-channel MOSFET in a TO247 package designed for high voltage power electronics applications. Its maximum drain-source voltage (VDS) is 800V, making it an excellent performer in high voltage environments. The device has an on-resistance (RDS(ON)) of 500mΩ (@VGS = 10V), providing stable performance at a maximum drain current of up to 11A. The IXFH9N80-VB uses SJ_Multi-EPI technology to ensure superior thermal and electrical properties for a wide range of industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH9N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH9N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage power management**: The IXFH9N80-VB is very suitable for high-voltage switching power supplies (SMPS), which can effectively manage the power conversion process and is widely used in industrial power supplies, communication equipment power supplies and high-power power supply systems.
2. **Inverter applications**: In photovoltaic inverters and other high-voltage power conversion devices, this MOSFET can handle high voltage and high current to ensure stable operation of the system, and is suitable for solar power generation systems and wind power generation equipment.
3. **Motor control**: This device can be used for high-voltage motor drive applications, and can effectively control brushless DC motors and stepper motors. It is widely used in industrial automation and electric vehicles.
4. **Lighting control system**: The IXFH9N80-VB performs well in high-voltage lighting control and can be used for street lighting, commercial lighting and large lamps. Control, providing efficient and stable lighting solutions.
In summary, IXFH9N80-VB is an ideal choice in high voltage power electronics design with its excellent performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
1. **High-voltage power management**: The IXFH9N80-VB is very suitable for high-voltage switching power supplies (SMPS), which can effectively manage the power conversion process and is widely used in industrial power supplies, communication equipment power supplies and high-power power supply systems.
2. **Inverter applications**: In photovoltaic inverters and other high-voltage power conversion devices, this MOSFET can handle high voltage and high current to ensure stable operation of the system, and is suitable for solar power generation systems and wind power generation equipment.
3. **Motor control**: This device can be used for high-voltage motor drive applications, and can effectively control brushless DC motors and stepper motors. It is widely used in industrial automation and electric vehicles.
4. **Lighting control system**: The IXFH9N80-VB performs well in high-voltage lighting control and can be used for street lighting, commercial lighting and large lamps. Control, providing efficient and stable lighting solutions.
In summary, IXFH9N80-VB is an ideal choice in high voltage power electronics design with its excellent performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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