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IXFH9N80Q-VB Product details
Back to previous pageProduct introduction：
1. IXFH9N80Q-VB Product Introduction
IXFH9N80Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A, and performs well in the field of power electronics. IXFH9N80Q-VB adopts advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, with an on-resistance of 500mΩ@VGS=10V, ensuring low power consumption and good thermal management performance, and is widely used in various power conversion and control systems.
IXFH9N80Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A, and performs well in the field of power electronics. IXFH9N80Q-VB adopts advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, with an on-resistance of 500mΩ@VGS=10V, ensuring low power consumption and good thermal management performance, and is widely used in various power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFH9N80Q-VB Detailed parameter description
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 500mΩ @ VGS=10V |
| Maximum drain current (ID) | 11A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 500mΩ @ VGS=10V |
| Maximum drain current (ID) | 11A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
Domain and module applications：
3. Applications and modules
1. **Switching Power Supply (SMPS)**
IXFH9N80Q-VB performs well in switching power supplies and is particularly suitable for use in AC-DC and DC-DC converters. Its 800V withstand voltage and low on-resistance enable it to demonstrate good energy efficiency in high-voltage power conversion and is widely used in power adapters, chargers and other devices.
2. **Industrial Motor Control**
This MOSFET is widely used in motor control systems in industrial automation and is particularly suitable for motor drives that require high voltage and medium current. The IXFH9N80Q-VB ensures stable operation under heavy load conditions and meets the performance and reliability requirements of industrial equipment.
3. **Renewable Energy Systems**
In solar inverters and wind power generation systems, the IXFH9N80Q-VB can efficiently achieve DC to AC power conversion and support efficient management of renewable energy. Its high voltage characteristics and good conductivity make it an ideal choice for these applications, helping to improve overall system efficiency.
4. **High-voltage power module**
IXFH9N80Q-VB can be used in high-voltage power modules, suitable for high-power converters and uninterruptible power supply (UPS) systems, and can cope with harsh voltage and current conditions to ensure system reliability and safety.
In summary, IXFH9N80Q-VB is an ideal choice for a variety of power electronics applications due to its high withstand voltage, high current and moderate on-resistance.
1. **Switching Power Supply (SMPS)**
IXFH9N80Q-VB performs well in switching power supplies and is particularly suitable for use in AC-DC and DC-DC converters. Its 800V withstand voltage and low on-resistance enable it to demonstrate good energy efficiency in high-voltage power conversion and is widely used in power adapters, chargers and other devices.
2. **Industrial Motor Control**
This MOSFET is widely used in motor control systems in industrial automation and is particularly suitable for motor drives that require high voltage and medium current. The IXFH9N80Q-VB ensures stable operation under heavy load conditions and meets the performance and reliability requirements of industrial equipment.
3. **Renewable Energy Systems**
In solar inverters and wind power generation systems, the IXFH9N80Q-VB can efficiently achieve DC to AC power conversion and support efficient management of renewable energy. Its high voltage characteristics and good conductivity make it an ideal choice for these applications, helping to improve overall system efficiency.
4. **High-voltage power module**
IXFH9N80Q-VB can be used in high-voltage power modules, suitable for high-power converters and uninterruptible power supply (UPS) systems, and can cope with harsh voltage and current conditions to ensure system reliability and safety.
In summary, IXFH9N80Q-VB is an ideal choice for a variety of power electronics applications due to its high withstand voltage, high current and moderate on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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