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IXFH8N80-VB Product details
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Product Introduction: IXFH8N80-VB
IXFH8N80-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 800V and can handle a leakage current of up to 11A. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, providing good energy efficiency and thermal management performance. IXFH8N80-VB uses SJ_Multi-EPI technology to ensure its excellent performance in high-frequency and high-power applications.
IXFH8N80-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 800V and can handle a leakage current of up to 11A. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, providing good energy efficiency and thermal management performance. IXFH8N80-VB uses SJ_Multi-EPI technology to ensure its excellent performance in high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH8N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH8N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power converters**:
The IXFH8N80-VB is ideal for high-voltage switching power supplies and DC-DC converters, efficiently converting high-voltage inputs to desired outputs. Its low on-resistance significantly reduces energy losses in high-frequency applications, improving overall efficiency.
2. **Motor drive systems**:
In industrial and electric vehicle motor control, this MOSFET can be used as a switching element for motor drives. With its high voltage tolerance and stability, the IXFH8N80-VB is able to meet the needs of fast startup and speed regulation.
3. **Power electronic devices**:
The IXFH8N80-VB is suitable for a variety of power electronic devices, such as inverters and frequency converters, and can operate reliably under high voltage and high frequency conditions, supporting power conversion and regulation, and is widely used in renewable energy systems.
4. **RF Power Amplifier**:
This device is also suitable for use in RF power amplifiers and communication equipment. It can effectively support high-frequency switching operations, ensure signal transmission quality and stability, and is suitable for wireless communication and broadcasting.
Through these application examples, the wide applicability and excellent performance of IXFH8N80-VB in high-voltage and high-power electronic equipment are demonstrated.
1. **High-voltage power converters**:
The IXFH8N80-VB is ideal for high-voltage switching power supplies and DC-DC converters, efficiently converting high-voltage inputs to desired outputs. Its low on-resistance significantly reduces energy losses in high-frequency applications, improving overall efficiency.
2. **Motor drive systems**:
In industrial and electric vehicle motor control, this MOSFET can be used as a switching element for motor drives. With its high voltage tolerance and stability, the IXFH8N80-VB is able to meet the needs of fast startup and speed regulation.
3. **Power electronic devices**:
The IXFH8N80-VB is suitable for a variety of power electronic devices, such as inverters and frequency converters, and can operate reliably under high voltage and high frequency conditions, supporting power conversion and regulation, and is widely used in renewable energy systems.
4. **RF Power Amplifier**:
This device is also suitable for use in RF power amplifiers and communication equipment. It can effectively support high-frequency switching operations, ensure signal transmission quality and stability, and is suitable for wireless communication and broadcasting.
Through these application examples, the wide applicability and excellent performance of IXFH8N80-VB in high-voltage and high-power electronic equipment are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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