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IXFH80N15Q-VB Product details
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Product Introduction
IXFH80N15Q-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 150V, suitable for a variety of medium and high voltage environments. The device's gate-source voltage (VGS) range is ±20V, and the turn-on voltage threshold (Vth) is 3V, ensuring fast switching response. The IXFH80N15Q-VB has an on-resistance (RDS(ON)) of 12mΩ at a gate voltage of 10V, and a maximum drain current (ID) of up to 150A. It uses Trench technology to optimize current conduction capability and thermal management, making it very suitable for high-power applications.
IXFH80N15Q-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 150V, suitable for a variety of medium and high voltage environments. The device's gate-source voltage (VGS) range is ±20V, and the turn-on voltage threshold (Vth) is 3V, ensuring fast switching response. The IXFH80N15Q-VB has an on-resistance (RDS(ON)) of 12mΩ at a gate voltage of 10V, and a maximum drain current (ID) of up to 150A. It uses Trench technology to optimize current conduction capability and thermal management, making it very suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH80N15Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: 3V
- **On-resistance (RDS(ON) @ VGS=10V)**: 12mΩ
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: IXFH80N15Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: 3V
- **On-resistance (RDS(ON) @ VGS=10V)**: 12mΩ
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
IXFH80N15Q-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies, DC-DC converters and AC-DC converters. It can achieve efficient energy conversion under high current conditions and is particularly suitable for servers and industrial power systems.
2. **Motor drive**: The IXFH80N15Q-VB can provide stable current for motor control systems, suitable for the driving needs of various power tools, household appliances and industrial automation equipment, and improve system efficiency and response speed.
3. **Battery management system**: Due to its low on-resistance and high current carrying capacity, this device is particularly suitable for battery management systems to help optimize the battery charging and discharging process and improve overall energy efficiency.
4. **Automotive Electronics Application**: In electric and hybrid vehicles, the IXFH80N15Q-VB can be used for high-voltage drive circuits and power conversion to improve system performance and stability, especially in power control and energy recovery.
Through these application examples, the high current and medium voltage characteristics of the IXFH80N15Q-VB make it an ideal choice in multiple high-performance electrical devices.
IXFH80N15Q-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies, DC-DC converters and AC-DC converters. It can achieve efficient energy conversion under high current conditions and is particularly suitable for servers and industrial power systems.
2. **Motor drive**: The IXFH80N15Q-VB can provide stable current for motor control systems, suitable for the driving needs of various power tools, household appliances and industrial automation equipment, and improve system efficiency and response speed.
3. **Battery management system**: Due to its low on-resistance and high current carrying capacity, this device is particularly suitable for battery management systems to help optimize the battery charging and discharging process and improve overall energy efficiency.
4. **Automotive Electronics Application**: In electric and hybrid vehicles, the IXFH80N15Q-VB can be used for high-voltage drive circuits and power conversion to improve system performance and stability, especially in power control and energy recovery.
Through these application examples, the high current and medium voltage characteristics of the IXFH80N15Q-VB make it an ideal choice in multiple high-performance electrical devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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