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IXFH80N10-VB Product details
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IXFH80N10-VB Product Introduction
The IXFH80N10-VB is a high-performance N-channel MOSFET in a TO247 package, designed for low voltage and high current applications. With a rated drain-source voltage of 100V and a maximum drain current of 72A, the device is ideal for use in high-efficiency power management and drive applications. The IXFH80N10-VB uses Trench technology and has a low on-resistance (RDS(ON) = 18mΩ@VGS=10V), providing excellent performance and energy efficiency in a variety of applications.
The IXFH80N10-VB is a high-performance N-channel MOSFET in a TO247 package, designed for low voltage and high current applications. With a rated drain-source voltage of 100V and a maximum drain current of 72A, the device is ideal for use in high-efficiency power management and drive applications. The IXFH80N10-VB uses Trench technology and has a low on-resistance (RDS(ON) = 18mΩ@VGS=10V), providing excellent performance and energy efficiency in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH80N10-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
- **Model**: IXFH80N10-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The IXFH80N10-VB is very suitable for high-efficiency switching power supplies and is widely used in power adapters, industrial power supplies, computer power supplies and other occasions. Its low conduction loss characteristics can significantly improve the overall efficiency of the system and reduce energy loss.
2. **Motor Control**: In motor drive systems, this MOSFET can support fast start and stop and efficient speed regulation of high-current motors, and is widely used in electric vehicles, automation equipment and household appliances.
3. **Inverter**: The IXFH80N10-VB performs well in photovoltaic and wind power inverters, which can efficiently convert DC power to AC power and improve the utilization rate of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: This device plays a vital role in UPS systems, managing high voltage and current to ensure reliable power support when power is interrupted and protect the safety of important equipment.
5. **Power Management IC**: IXFH80N10-VB can be used as a switching device in the power management integrated circuit to improve the system's response speed and overall performance to meet the needs of a variety of high-performance applications.
With its excellent current handling capability and low on-resistance, the IXFH80N10-VB is an ideal choice for meeting the needs of a variety of low-voltage applications in modern power electronic systems.
1. **Switching Power Supply (SMPS)**: The IXFH80N10-VB is very suitable for high-efficiency switching power supplies and is widely used in power adapters, industrial power supplies, computer power supplies and other occasions. Its low conduction loss characteristics can significantly improve the overall efficiency of the system and reduce energy loss.
2. **Motor Control**: In motor drive systems, this MOSFET can support fast start and stop and efficient speed regulation of high-current motors, and is widely used in electric vehicles, automation equipment and household appliances.
3. **Inverter**: The IXFH80N10-VB performs well in photovoltaic and wind power inverters, which can efficiently convert DC power to AC power and improve the utilization rate of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: This device plays a vital role in UPS systems, managing high voltage and current to ensure reliable power support when power is interrupted and protect the safety of important equipment.
5. **Power Management IC**: IXFH80N10-VB can be used as a switching device in the power management integrated circuit to improve the system's response speed and overall performance to meet the needs of a variety of high-performance applications.
With its excellent current handling capability and low on-resistance, the IXFH80N10-VB is an ideal choice for meeting the needs of a variety of low-voltage applications in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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