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IXFH96N20P-VB Product details
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Product Introduction
**IXFH96N20P-VB** is a high-performance N-channel MOSFET in a TO247 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, suitable for a variety of power electronic devices. The device has an on-resistance (RDS(ON)) of 21mΩ (@VGS = 10V) and exhibits extremely low power loss at a maximum drain current of up to 96A. The IXFH96N20P-VB uses Trench technology to provide excellent thermal management and electrical characteristics, ensuring stability and reliability under high load conditions.
**IXFH96N20P-VB** is a high-performance N-channel MOSFET in a TO247 package, designed for medium voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, suitable for a variety of power electronic devices. The device has an on-resistance (RDS(ON)) of 21mΩ (@VGS = 10V) and exhibits extremely low power loss at a maximum drain current of up to 96A. The IXFH96N20P-VB uses Trench technology to provide excellent thermal management and electrical characteristics, ensuring stability and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH96N20P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**:
- 21mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
- **Model**: IXFH96N20P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**:
- 21mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: The IXFH96N20P-VB is very suitable for switching power supply (SMPS) design. Its low on-resistance and high current handling capability can significantly improve the efficiency of the power supply. It is widely used in computer power supplies, network equipment and industrial power systems.
2. **Motor drive**: In motor control applications, this MOSFET can be used for efficient drive of brushless DC motors and stepper motors, suitable for industrial automation, home appliances and electric vehicles.
3. **Inverter**: The IXFH96N20P-VB can effectively process electrical energy in photovoltaic inverters and other power conversion devices, ensuring stability in high-voltage environments. It is widely used in solar power generation systems and renewable energy applications.
4. **Battery management system**: The device performs well in battery charge and discharge management, can efficiently control current flow, ensure battery safety and stability, and is suitable for electric vehicles and energy storage systems.
In summary, IXFH96N20P-VB is an ideal choice for medium voltage and high current power electronics design with its superior performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
1. **Switching power supply**: The IXFH96N20P-VB is very suitable for switching power supply (SMPS) design. Its low on-resistance and high current handling capability can significantly improve the efficiency of the power supply. It is widely used in computer power supplies, network equipment and industrial power systems.
2. **Motor drive**: In motor control applications, this MOSFET can be used for efficient drive of brushless DC motors and stepper motors, suitable for industrial automation, home appliances and electric vehicles.
3. **Inverter**: The IXFH96N20P-VB can effectively process electrical energy in photovoltaic inverters and other power conversion devices, ensuring stability in high-voltage environments. It is widely used in solar power generation systems and renewable energy applications.
4. **Battery management system**: The device performs well in battery charge and discharge management, can efficiently control current flow, ensure battery safety and stability, and is suitable for electric vehicles and energy storage systems.
In summary, IXFH96N20P-VB is an ideal choice for medium voltage and high current power electronics design with its superior performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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