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IXFH76N07-11-VB Product details
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Product Introduction: IXFH76N07-11-VB
IXFH76N07-11-VB is a high-performance single N-channel MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V and can handle leakage currents up to 150A. The device has a threshold voltage (Vth) of 2.5V and an extremely low on-resistance (RDS(ON)) of only 7mΩ at VGS=10V, ensuring excellent energy efficiency and low power consumption. IXFH76N07-11-VB uses Trench technology, providing excellent switching performance and thermal management capabilities, and is suitable for high-frequency and high-power applications.
IXFH76N07-11-VB is a high-performance single N-channel MOSFET in TO247 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V and can handle leakage currents up to 150A. The device has a threshold voltage (Vth) of 2.5V and an extremely low on-resistance (RDS(ON)) of only 7mΩ at VGS=10V, ensuring excellent energy efficiency and low power consumption. IXFH76N07-11-VB uses Trench technology, providing excellent switching performance and thermal management capabilities, and is suitable for high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH76N07-11-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Model**: IXFH76N07-11-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power management system**:
The IXFH76N07-11-VB is ideal for high-efficiency power management systems such as DC-DC converters and switching power supplies. Its low on-resistance can significantly reduce energy loss and improve overall efficiency, making it suitable for a variety of power modules.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element for high-power motor drivers. With its high current capability, the IXFH76N07-11-VB can meet the requirements of fast startup and speed regulation, making it suitable for industrial automation and electric vehicle drives.
3. **Renewable energy system**:
The device is also suitable for photovoltaic inverters and wind power generation systems to help convert DC power into AC power for use in the power grid or load. Its high efficiency and reliability ensure stable operation in various environments.
4. **High-frequency switching applications**:
The IXFH76N07-11-VB performs well in high-frequency applications and is suitable for use in RF power amplifiers and wireless communication equipment. It can effectively support high-frequency switching operations and ensure the quality and stability of signal transmission.
Through these application examples, the wide applicability and excellent performance of the IXFH76N07-11-VB in low-voltage, high-current electronic devices are demonstrated.
1. **Power management system**:
The IXFH76N07-11-VB is ideal for high-efficiency power management systems such as DC-DC converters and switching power supplies. Its low on-resistance can significantly reduce energy loss and improve overall efficiency, making it suitable for a variety of power modules.
2. **Motor drive**:
In motor control systems, this MOSFET can be used as a switching element for high-power motor drivers. With its high current capability, the IXFH76N07-11-VB can meet the requirements of fast startup and speed regulation, making it suitable for industrial automation and electric vehicle drives.
3. **Renewable energy system**:
The device is also suitable for photovoltaic inverters and wind power generation systems to help convert DC power into AC power for use in the power grid or load. Its high efficiency and reliability ensure stable operation in various environments.
4. **High-frequency switching applications**:
The IXFH76N07-11-VB performs well in high-frequency applications and is suitable for use in RF power amplifiers and wireless communication equipment. It can effectively support high-frequency switching operations and ensure the quality and stability of signal transmission.
Through these application examples, the wide applicability and excellent performance of the IXFH76N07-11-VB in low-voltage, high-current electronic devices are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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