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IXFH68N20-VB Product details
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1. IXFH68N20-VB Product Introduction
IXFH68N20-VB is a high-performance single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. It has a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 96A, showing excellent performance in the field of power electronics. IXFH68N20-VB adopts innovative Trench technology, with an on-resistance as low as 21mΩ@VGS=10V, ensuring low power consumption and good heat dissipation performance, suitable for use in a variety of high-efficiency power supplies and control systems.
IXFH68N20-VB is a high-performance single N-channel MOSFET in TO247 package, designed for medium and high voltage applications. It has a drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 96A, showing excellent performance in the field of power electronics. IXFH68N20-VB adopts innovative Trench technology, with an on-resistance as low as 21mΩ@VGS=10V, ensuring low power consumption and good heat dissipation performance, suitable for use in a variety of high-efficiency power supplies and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFH68N20-VB Detailed parameter description
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 200V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 4V |
| On-resistance (RDS(ON)) | 21mΩ @ VGS=10V |
| Maximum drain current (ID) | 96A |
| Technology| Trench |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 200V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 4V |
| On-resistance (RDS(ON)) | 21mΩ @ VGS=10V |
| Maximum drain current (ID) | 96A |
| Technology| Trench |
Domain and module applications：
III. Applications and modules
1. **Switching Power Supply (SMPS)**
IXFH68N20-VB performs well in switching power supplies, especially for AC-DC and DC-DC converters. Its 200V withstand voltage and low on-resistance can significantly reduce energy loss and improve power conversion efficiency, making it suitable for various power adapters and chargers.
2. **Electric Vehicle Applications**
This MOSFET is widely used in electric vehicle drive systems, and can effectively handle high current and medium voltage power conversion tasks, ensuring efficient performance and reliability of electric vehicles.
3. **Motor Drive Systems**
IXFH68N20-VB is suitable for industrial motor control and drive systems, especially where high-frequency switching and high current are required. Its excellent heat dissipation performance and high current capability ensure stable operation under heavy load conditions.
4. **Renewable Energy Equipment**
In solar inverters and wind power generation systems, this MOSFET can efficiently achieve DC to AC power conversion, supporting efficient management of renewable energy. Its good electrical characteristics make it an ideal choice for these applications, helping to improve the overall efficiency of the system.
In general, the IXFH68N20-VB is an ideal choice for a variety of power electronics applications due to its high efficiency, high current and low on-resistance.
1. **Switching Power Supply (SMPS)**
IXFH68N20-VB performs well in switching power supplies, especially for AC-DC and DC-DC converters. Its 200V withstand voltage and low on-resistance can significantly reduce energy loss and improve power conversion efficiency, making it suitable for various power adapters and chargers.
2. **Electric Vehicle Applications**
This MOSFET is widely used in electric vehicle drive systems, and can effectively handle high current and medium voltage power conversion tasks, ensuring efficient performance and reliability of electric vehicles.
3. **Motor Drive Systems**
IXFH68N20-VB is suitable for industrial motor control and drive systems, especially where high-frequency switching and high current are required. Its excellent heat dissipation performance and high current capability ensure stable operation under heavy load conditions.
4. **Renewable Energy Equipment**
In solar inverters and wind power generation systems, this MOSFET can efficiently achieve DC to AC power conversion, supporting efficient management of renewable energy. Its good electrical characteristics make it an ideal choice for these applications, helping to improve the overall efficiency of the system.
In general, the IXFH68N20-VB is an ideal choice for a variety of power electronics applications due to its high efficiency, high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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