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IXFH67N10-VB Product details
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IXFH67N10-VB Product Introduction
IXFH67N10-VB is a high-efficiency power MOSFET in TO247 package, designed for low voltage and high current applications. Its drain-source withstand voltage is 100V, and the maximum leakage current can reach 72A, which is suitable for use in electrical environments that require fast switching and high efficiency. The device adopts Trench technology and has extremely low on-resistance (18mΩ @ VGS=10V), which effectively reduces energy consumption and improves system efficiency. It is widely used in various power conversion and drive modules.
IXFH67N10-VB is a high-efficiency power MOSFET in TO247 package, designed for low voltage and high current applications. Its drain-source withstand voltage is 100V, and the maximum leakage current can reach 72A, which is suitable for use in electrical environments that require fast switching and high efficiency. The device adopts Trench technology and has extremely low on-resistance (18mΩ @ VGS=10V), which effectively reduces energy consumption and improves system efficiency. It is widely used in various power conversion and drive modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH67N10-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
- **Model**: IXFH67N10-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 72A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXFH67N10-VB is commonly used in switching power supply design. As an efficient switching element, it achieves excellent power conversion efficiency under high-frequency operation and is suitable for various power adapters and power electronic equipment.
2. **Motor drive**: This MOSFET can be widely used in motor drive systems, supporting high current output and fast response, suitable for various motor controls, and optimizing motor performance.
3. **Power management system**: In power management applications, IXFH67N10-VB is suitable for use as a power switch to help optimize power distribution and improve energy efficiency. It is widely used in consumer electronics, industrial automation, and communication equipment.
4. **LED driver**: With its low on-resistance and high current capability, the device can also be used in LED driver power to provide stable current output to ensure efficient and stable operation of LEDs.
Through its excellent performance and wide application, IXFH67N10-VB becomes an important choice for modern power conversion and management.
1. **Switching power supply**: IXFH67N10-VB is commonly used in switching power supply design. As an efficient switching element, it achieves excellent power conversion efficiency under high-frequency operation and is suitable for various power adapters and power electronic equipment.
2. **Motor drive**: This MOSFET can be widely used in motor drive systems, supporting high current output and fast response, suitable for various motor controls, and optimizing motor performance.
3. **Power management system**: In power management applications, IXFH67N10-VB is suitable for use as a power switch to help optimize power distribution and improve energy efficiency. It is widely used in consumer electronics, industrial automation, and communication equipment.
4. **LED driver**: With its low on-resistance and high current capability, the device can also be used in LED driver power to provide stable current output to ensure efficient and stable operation of LEDs.
Through its excellent performance and wide application, IXFH67N10-VB becomes an important choice for modern power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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