IXFH60N50P3-VB Product details
Product introduction:
IXFH60N50P3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 500V and can handle leakage currents up to 40A. The device has a threshold voltage (Vth) of 3.8V and a low on-resistance (RDS(ON)) of 80mΩ at VGS=10V, ensuring excellent energy efficiency and low power consumption. IXFH60N50P3-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and switching characteristics, suitable for use in high-frequency and high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: IXFH60N50P3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power converters**:
The IXFH60N50P3-VB is ideal for high-voltage switching power supplies and DC-DC converters, efficiently converting input voltage to the desired output voltage. Its low on-resistance effectively reduces energy loss and improves overall conversion efficiency, especially for high-frequency switching applications.
2. **Motor drive systems**:
In industrial and automotive motor control, this MOSFET can be used as a switching element in motor drives. With its high current handling capability and stable performance, the IXFH60N50P3-VB can meet the needs of high loads, fast startup and speed regulation, and is suitable for various motor control applications.
3. **Electric vehicle charging systems**:
The IXFH60N50P3-VB is suitable for electric vehicle chargers, especially in fast charging equipment, which can safely and efficiently handle large amounts of current, improve charging speed and efficiency, and meet the market demand for high-efficiency charging.
4. **Renewable Energy Inverter**:
The device can also be used in photovoltaic inverters and wind power generation systems to support the conversion of DC power to AC power for use in the power grid or load. Its high voltage characteristics and reliability ensure stable operation in various climatic conditions.
Through these application examples, the wide applicability and excellent performance of the IXFH60N50P3-VB in high-voltage and high-power electronic devices are demonstrated.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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