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IXFH58N20Q-VB Product details
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Product Introduction
IXFH58N20Q-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium-to-high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can operate stably in a higher voltage environment. The gate-source voltage (VGS) range of the device is ±20V, and the turn-on voltage threshold (Vth) is 4V, ensuring a fast switching response. The on-resistance (RDS(ON)) of the IXFH58N20Q-VB at a gate voltage of 10V is 21mΩ, and the maximum drain current (ID) can reach 96A. It uses Trench technology to optimize conductivity and thermal management, making it very suitable for high-power applications.
IXFH58N20Q-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for medium-to-high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can operate stably in a higher voltage environment. The gate-source voltage (VGS) range of the device is ±20V, and the turn-on voltage threshold (Vth) is 4V, ensuring a fast switching response. The on-resistance (RDS(ON)) of the IXFH58N20Q-VB at a gate voltage of 10V is 21mΩ, and the maximum drain current (ID) can reach 96A. It uses Trench technology to optimize conductivity and thermal management, making it very suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH58N20Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: 4V
- **On-resistance (RDS(ON) @ VGS=10V)**: 21mΩ
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
- **Model**: IXFH58N20Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: 4V
- **On-resistance (RDS(ON) @ VGS=10V)**: 21mΩ
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
IXFH58N20Q-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion under high current conditions, especially suitable for servers and industrial power supplies.
2. **Motor drive**: The IXFH58N20Q-VB can provide stable current for motor control systems, suitable for the driving needs of various power tools and household appliances, and improve the efficiency and response speed of the system.
3. **Battery management system**: Due to its low on-resistance and high current carrying capacity, this device is particularly suitable for use in battery management systems, which helps to improve the efficiency of battery charging and discharging.
4. **Automotive electronic applications**: In electric vehicles and hybrid vehicles, the IXFH58N20Q-VB can be used for high-voltage drive circuits and power conversion to improve the performance and stability of the system.
Through these application examples, the high current and medium voltage characteristics of the IXFH58N20Q-VB make it an ideal choice in multiple high-performance electrical equipment.
IXFH58N20Q-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion under high current conditions, especially suitable for servers and industrial power supplies.
2. **Motor drive**: The IXFH58N20Q-VB can provide stable current for motor control systems, suitable for the driving needs of various power tools and household appliances, and improve the efficiency and response speed of the system.
3. **Battery management system**: Due to its low on-resistance and high current carrying capacity, this device is particularly suitable for use in battery management systems, which helps to improve the efficiency of battery charging and discharging.
4. **Automotive electronic applications**: In electric vehicles and hybrid vehicles, the IXFH58N20Q-VB can be used for high-voltage drive circuits and power conversion to improve the performance and stability of the system.
Through these application examples, the high current and medium voltage characteristics of the IXFH58N20Q-VB make it an ideal choice in multiple high-performance electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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