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IXFH52N50P2-VB Product details
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IXFH52N50P2-VB Product Introduction
The IXFH52N50P2-VB is a high-performance N-channel MOSFET in a TO247 package designed for high voltage and high current applications. With a rated drain-source voltage of 500V and a maximum drain current of 40A, the device is ideal for power management systems that require high performance and reliability. The IXFH52N50P2-VB uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in power conversion and drive applications.
The IXFH52N50P2-VB is a high-performance N-channel MOSFET in a TO247 package designed for high voltage and high current applications. With a rated drain-source voltage of 500V and a maximum drain current of 40A, the device is ideal for power management systems that require high performance and reliability. The IXFH52N50P2-VB uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in power conversion and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH52N50P2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH52N50P2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The IXFH52N50P2-VB is very suitable for high-voltage switching power supply applications, such as power adapters and server power supplies. Its high withstand voltage and low conduction loss characteristics can effectively improve the efficiency and stability of the power supply.
2. **Motor Control**: In motor drive systems, this MOSFET can be used for medium-voltage motor control, supporting fast start and stop and efficient speed regulation of high-power motors, and is widely used in industrial automation and household appliances.
3. **Inverter**: The IXFH52N50P2-VB is very suitable for photovoltaic and wind power inverters, which can efficiently convert DC power to AC power, thereby maximizing the efficiency of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: This device plays an important role in UPS systems for high-voltage current management, ensuring stable power support in the event of a power failure and protecting the safety of important equipment.
5. **Industrial Automation**: In various industrial equipment and automation systems, the IXFH52N50P2-VB can be used as a power switch to control the switching operation of high-power loads, improving the responsiveness and reliability of the equipment.
With its excellent high-current handling capability and electrical performance, the IXFH52N50P2-VB is an ideal choice for a variety of high-voltage applications in modern power electronics systems.
1. **Switching Power Supply (SMPS)**: The IXFH52N50P2-VB is very suitable for high-voltage switching power supply applications, such as power adapters and server power supplies. Its high withstand voltage and low conduction loss characteristics can effectively improve the efficiency and stability of the power supply.
2. **Motor Control**: In motor drive systems, this MOSFET can be used for medium-voltage motor control, supporting fast start and stop and efficient speed regulation of high-power motors, and is widely used in industrial automation and household appliances.
3. **Inverter**: The IXFH52N50P2-VB is very suitable for photovoltaic and wind power inverters, which can efficiently convert DC power to AC power, thereby maximizing the efficiency of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: This device plays an important role in UPS systems for high-voltage current management, ensuring stable power support in the event of a power failure and protecting the safety of important equipment.
5. **Industrial Automation**: In various industrial equipment and automation systems, the IXFH52N50P2-VB can be used as a power switch to control the switching operation of high-power loads, improving the responsiveness and reliability of the equipment.
With its excellent high-current handling capability and electrical performance, the IXFH52N50P2-VB is an ideal choice for a variety of high-voltage applications in modern power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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