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IXFH52N30Q-VB Product details
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IXFH52N30Q-VB Product Introduction
The IXFH52N30Q-VB is a high-performance N-channel power MOSFET in a TO247 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 500V and a maximum drain current of 47A, the device is suitable for a variety of applications such as power management, inverters, and industrial control systems. The IXFH52N30Q-VB uses SJ_Multi-EPI technology, with low on-resistance and superior thermal management performance, ensuring stability and reliability under high load conditions.
The IXFH52N30Q-VB is a high-performance N-channel power MOSFET in a TO247 package, designed for high voltage and high current applications. With a maximum drain-source voltage of 500V and a maximum drain current of 47A, the device is suitable for a variety of applications such as power management, inverters, and industrial control systems. The IXFH52N30Q-VB uses SJ_Multi-EPI technology, with low on-resistance and superior thermal management performance, ensuring stability and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | 50mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH52N30Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 500V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 50mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH52N30Q-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 500V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.5V
- **RDS(ON) (On-resistance)**: 50mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply (SMPS)**:
IXFH52N30Q-VB is very suitable for use in high-voltage switching power supplies. It can switch efficiently under high voltage conditions, reduce power consumption, improve energy efficiency, and meet the needs of modern power supply design.
2. **Photovoltaic inverter**:
This MOSFET can be used in photovoltaic inverters to convert DC power generated by solar cells into AC power, support the use of renewable energy, and promote the development of clean energy.
3. **Motor drive system**:
In motor drive applications, IXFH52N30Q-VB provides excellent current control and is suitable for driving industrial and household appliance motors, ensuring fast response and stable operation of motors under high loads.
4. **Uninterruptible power supply (UPS)**:
In UPS systems, this MOSFET acts as a high-voltage switching element and can switch quickly to ensure continuous power supply when power is interrupted, improving system reliability.
5. **Industrial Automation and Control**:
IXFH52N30Q-VB can be used for high-voltage switching and current management in industrial automation control systems. It is suitable for various high-efficiency industrial equipment and improves the stability and efficiency of the system.
Through these application examples, IXFH52N30Q-VB demonstrates its wide applicability in high-voltage and high-efficiency demanding systems, providing reliable performance support for modern power electronic equipment.
1. **High-voltage switching power supply (SMPS)**:
IXFH52N30Q-VB is very suitable for use in high-voltage switching power supplies. It can switch efficiently under high voltage conditions, reduce power consumption, improve energy efficiency, and meet the needs of modern power supply design.
2. **Photovoltaic inverter**:
This MOSFET can be used in photovoltaic inverters to convert DC power generated by solar cells into AC power, support the use of renewable energy, and promote the development of clean energy.
3. **Motor drive system**:
In motor drive applications, IXFH52N30Q-VB provides excellent current control and is suitable for driving industrial and household appliance motors, ensuring fast response and stable operation of motors under high loads.
4. **Uninterruptible power supply (UPS)**:
In UPS systems, this MOSFET acts as a high-voltage switching element and can switch quickly to ensure continuous power supply when power is interrupted, improving system reliability.
5. **Industrial Automation and Control**:
IXFH52N30Q-VB can be used for high-voltage switching and current management in industrial automation control systems. It is suitable for various high-efficiency industrial equipment and improves the stability and efficiency of the system.
Through these application examples, IXFH52N30Q-VB demonstrates its wide applicability in high-voltage and high-efficiency demanding systems, providing reliable performance support for modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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