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IXFH52N30P-VB Product details
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Product Introduction
**IXFH52N30P-VB** is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, making it suitable for a variety of power electronic equipment requiring high voltage. The device has an on-resistance (RDS(ON)) of 75mΩ (@VGS = 10V), which performs well under high current conditions (ID up to 47A), effectively reducing power losses. IXFH52N30P-VB uses SJ_Multi-EPI technology to provide excellent thermal management performance and electrical characteristics, ensuring reliability and stability under high load conditions.
**IXFH52N30P-VB** is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 650V, making it suitable for a variety of power electronic equipment requiring high voltage. The device has an on-resistance (RDS(ON)) of 75mΩ (@VGS = 10V), which performs well under high current conditions (ID up to 47A), effectively reducing power losses. IXFH52N30P-VB uses SJ_Multi-EPI technology to provide excellent thermal management performance and electrical characteristics, ensuring reliability and stability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH52N30P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 75mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH52N30P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 75mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH52N30P-VB is very suitable for high-efficiency switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the efficiency of the power supply. It is widely used in computer power supply, server power supply and industrial power supply systems.
2. **Motor drive**: This MOSFET performs well in motor control applications and is suitable for driving brushless DC motors and stepper motors. It can effectively control the start, stop and speed of the motor and is widely used in industrial automation and robotics.
3. **Inverter**: IXFH52N30P-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability in high-voltage environments. It is widely used in solar power generation and wind power systems.
4. **LED driver**: In LED lighting and intelligent lighting systems, this device can be used as an efficient switching element to provide precise lighting control, improve overall energy efficiency and extend service life, and is suitable for modern lighting solutions.
In summary, IXFH52N30P-VB is an ideal choice in high voltage power electronics design with its excellent performance and wide application range, and can meet the needs of various industrial and commercial applications.
1. **Switching power supply**: IXFH52N30P-VB is very suitable for high-efficiency switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the efficiency of the power supply. It is widely used in computer power supply, server power supply and industrial power supply systems.
2. **Motor drive**: This MOSFET performs well in motor control applications and is suitable for driving brushless DC motors and stepper motors. It can effectively control the start, stop and speed of the motor and is widely used in industrial automation and robotics.
3. **Inverter**: IXFH52N30P-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability in high-voltage environments. It is widely used in solar power generation and wind power systems.
4. **LED driver**: In LED lighting and intelligent lighting systems, this device can be used as an efficient switching element to provide precise lighting control, improve overall energy efficiency and extend service life, and is suitable for modern lighting solutions.
In summary, IXFH52N30P-VB is an ideal choice in high voltage power electronics design with its excellent performance and wide application range, and can meet the needs of various industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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