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IXFH50N60B2-VB Product details
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IXFH50N60B2-VB Product Introduction
The IXFH50N60B2-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source withstand voltage is up to 650V and the maximum leakage current can reach 47A, making it suitable for use in harsh electrical environments. Based on SJ_Multi-EPI technology, the device provides lower on-resistance (75mΩ @ VGS=10V), effectively reducing energy consumption and improving the overall efficiency of the system, and is widely used in various power conversion and management solutions.
The IXFH50N60B2-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source withstand voltage is up to 650V and the maximum leakage current can reach 47A, making it suitable for use in harsh electrical environments. Based on SJ_Multi-EPI technology, the device provides lower on-resistance (75mΩ @ VGS=10V), effectively reducing energy consumption and improving the overall efficiency of the system, and is widely used in various power conversion and management solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH50N60B2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH50N60B2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFH50N60B2-VB is widely used in switching power supply design. As an efficient switching element, it can achieve excellent power conversion efficiency under high-frequency operation and is suitable for various power adapters and power electronic devices.
2. **Inverter**: In solar inverter and other inverter applications, this MOSFET is the main switching element, which can efficiently convert power and ensure system stability under high load and high voltage conditions.
3. **Motor drive system**: With its high current carrying capacity, IXFH50N60B2-VB is suitable for motor drive systems to provide stable current output and optimize motor performance and control.
4. **Power management system**: This device performs well in power management applications and can be used as a power switch to help optimize power distribution and improve energy efficiency. It is widely used in consumer electronics, industrial automation and communication equipment.
Through its excellent performance and diverse applications, the IXFH50N60B2-VB is an ideal choice for modern and efficient power conversion and management.
1. **Switching power supply**: IXFH50N60B2-VB is widely used in switching power supply design. As an efficient switching element, it can achieve excellent power conversion efficiency under high-frequency operation and is suitable for various power adapters and power electronic devices.
2. **Inverter**: In solar inverter and other inverter applications, this MOSFET is the main switching element, which can efficiently convert power and ensure system stability under high load and high voltage conditions.
3. **Motor drive system**: With its high current carrying capacity, IXFH50N60B2-VB is suitable for motor drive systems to provide stable current output and optimize motor performance and control.
4. **Power management system**: This device performs well in power management applications and can be used as a power switch to help optimize power distribution and improve energy efficiency. It is widely used in consumer electronics, industrial automation and communication equipment.
Through its excellent performance and diverse applications, the IXFH50N60B2-VB is an ideal choice for modern and efficient power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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