中文
English
IXFH50N30-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IXFH50N30-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage, suitable for high voltage and high current applications. The maximum leakage current of this MOSFET is 40A, the gate-source voltage range is ±30V, and the threshold voltage is 3.8V. Its on-resistance is 80mΩ (at VGS=10V), which performs well in power management and switch control applications, providing high efficiency and reliability.
**IXFH50N30-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage, suitable for high voltage and high current applications. The maximum leakage current of this MOSFET is 40A, the gate-source voltage range is ±30V, and the threshold voltage is 3.8V. Its on-resistance is 80mΩ (at VGS=10V), which performs well in power management and switch control applications, providing high efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH50N30-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH50N30-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFH50N30-VB can be widely used in switching power supply design. As the main switching element, it can efficiently control power conversion, optimize output performance, and reduce energy loss. It is suitable for various power adapters and power modules.
2. **Electric vehicle charger**: This MOSFET is very suitable for electric vehicle chargers. It can handle high current and high voltage, ensure fast and stable charging process, and improve charging efficiency.
3. **Industrial motor control**: In motor drive applications, IXFH50N30-VB can effectively regulate the start and stop of the motor, provide smooth current control, and is suitable for industrial automation, robots and other high-efficiency equipment.
4. **Renewable energy system**: This MOSFET is suitable for solar inverters and wind power generation systems, supporting efficient energy conversion and stable output, ensuring the effective use of renewable energy.
Through these application examples, we can see the wide applicability of IXFH50N30-VB in high voltage and high current environments, meeting the high performance and reliability requirements of modern electronic equipment.
1. **Switching power supply**: IXFH50N30-VB can be widely used in switching power supply design. As the main switching element, it can efficiently control power conversion, optimize output performance, and reduce energy loss. It is suitable for various power adapters and power modules.
2. **Electric vehicle charger**: This MOSFET is very suitable for electric vehicle chargers. It can handle high current and high voltage, ensure fast and stable charging process, and improve charging efficiency.
3. **Industrial motor control**: In motor drive applications, IXFH50N30-VB can effectively regulate the start and stop of the motor, provide smooth current control, and is suitable for industrial automation, robots and other high-efficiency equipment.
4. **Renewable energy system**: This MOSFET is suitable for solar inverters and wind power generation systems, supporting efficient energy conversion and stable output, ensuring the effective use of renewable energy.
Through these application examples, we can see the wide applicability of IXFH50N30-VB in high voltage and high current environments, meeting the high performance and reliability requirements of modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
