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IXFH50N30Q3-VB Product details
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Product Introduction: IXFH50N30Q3-VB
IXFH50N30Q3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 500V and can handle leakage currents up to 40A. The device has a threshold voltage (Vth) of 3.8V and a low on-resistance (RDS(ON)) of 80mΩ at VGS=10V, ensuring excellent energy efficiency and low power consumption. IXFH50N30Q3-VB uses SJ_Multi-EPI technology, which provides excellent thermal performance and switching characteristics, and is suitable for use in high-frequency and high-power applications.
IXFH50N30Q3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 500V and can handle leakage currents up to 40A. The device has a threshold voltage (Vth) of 3.8V and a low on-resistance (RDS(ON)) of 80mΩ at VGS=10V, ensuring excellent energy efficiency and low power consumption. IXFH50N30Q3-VB uses SJ_Multi-EPI technology, which provides excellent thermal performance and switching characteristics, and is suitable for use in high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH50N30Q3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH50N30Q3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power converters**:
The IXFH50N30Q3-VB is ideal for high-voltage switching power supplies and DC-DC converters. Its low on-resistance significantly reduces energy losses and improves power conversion efficiency, especially for high-frequency switching applications.
2. **Motor drive systems**:
In the field of motor control, this MOSFET can be used as a switching element in motor drivers. With its high current handling capability and stable performance, the IXFH50N30Q3-VB can meet the needs of high loads and fast response.
3. **Electric vehicle charging systems**:
The IXFH50N30Q3-VB is suitable for electric vehicle chargers, especially in fast charging equipment, where it can safely and efficiently handle large amounts of current, improving charging speed and the overall efficiency of the system.
4. **Renewable Energy Inverter**:
The device can also be used in photovoltaic inverters and wind power generation systems to support the conversion of DC power from renewable energy into AC power. Its high voltage characteristics and reliability ensure stable operation under various conditions.
Through these application examples, the wide applicability and excellent performance of IXFH50N30Q3-VB in high-voltage and high-power electronic devices are demonstrated.
1. **High-voltage power converters**:
The IXFH50N30Q3-VB is ideal for high-voltage switching power supplies and DC-DC converters. Its low on-resistance significantly reduces energy losses and improves power conversion efficiency, especially for high-frequency switching applications.
2. **Motor drive systems**:
In the field of motor control, this MOSFET can be used as a switching element in motor drivers. With its high current handling capability and stable performance, the IXFH50N30Q3-VB can meet the needs of high loads and fast response.
3. **Electric vehicle charging systems**:
The IXFH50N30Q3-VB is suitable for electric vehicle chargers, especially in fast charging equipment, where it can safely and efficiently handle large amounts of current, improving charging speed and the overall efficiency of the system.
4. **Renewable Energy Inverter**:
The device can also be used in photovoltaic inverters and wind power generation systems to support the conversion of DC power from renewable energy into AC power. Its high voltage characteristics and reliability ensure stable operation under various conditions.
Through these application examples, the wide applicability and excellent performance of IXFH50N30Q3-VB in high-voltage and high-power electronic devices are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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