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IXFH42N20-VB Product details
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Product Introduction
**IXFH42N20-VB** is a high-performance N-channel MOSFET in a TO247 package designed for low to medium voltage applications. Its maximum drain-source voltage (VDS) is 200V, making it an excellent choice for power electronics devices that require high current and lower voltage. The device has an on-resistance (RDS(ON)) of 56mΩ (@VGS = 10V), which effectively reduces power losses under high current conditions (ID up to 35A). IXFH42N20-VB uses Trench technology to provide good thermal performance and electrical characteristics, ensuring stability and reliability under high load conditions.
**IXFH42N20-VB** is a high-performance N-channel MOSFET in a TO247 package designed for low to medium voltage applications. Its maximum drain-source voltage (VDS) is 200V, making it an excellent choice for power electronics devices that require high current and lower voltage. The device has an on-resistance (RDS(ON)) of 56mΩ (@VGS = 10V), which effectively reduces power losses under high current conditions (ID up to 35A). IXFH42N20-VB uses Trench technology to provide good thermal performance and electrical characteristics, ensuring stability and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH42N20-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 56mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: IXFH42N20-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 56mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: The IXFH42N20-VB is ideal for switch mode power supply (SMPS) design, providing stable current and voltage in efficient power conversion, and is widely used in computer power supplies and consumer electronics.
2. **Motor control**: This MOSFET performs well in motor drive applications, effectively controlling brushless DC motors and stepper motors, and is suitable for industrial automation equipment and robotics.
3. **Inverter**: The IXFH42N20-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability in medium voltage environments, and is widely used in renewable energy systems such as solar power generation.
4. **LED driver**: In LED lighting and smart lighting systems, this device can be used as an efficient switching element to achieve precise lighting control, improve energy efficiency and extend the service life of lamps, suitable for modern lighting solutions.
In general, IXFH42N20-VB is an ideal choice for low to medium voltage power electronics design with its superior performance and wide application range, and can meet the needs of various industrial and commercial applications.
1. **Power management**: The IXFH42N20-VB is ideal for switch mode power supply (SMPS) design, providing stable current and voltage in efficient power conversion, and is widely used in computer power supplies and consumer electronics.
2. **Motor control**: This MOSFET performs well in motor drive applications, effectively controlling brushless DC motors and stepper motors, and is suitable for industrial automation equipment and robotics.
3. **Inverter**: The IXFH42N20-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability in medium voltage environments, and is widely used in renewable energy systems such as solar power generation.
4. **LED driver**: In LED lighting and smart lighting systems, this device can be used as an efficient switching element to achieve precise lighting control, improve energy efficiency and extend the service life of lamps, suitable for modern lighting solutions.
In general, IXFH42N20-VB is an ideal choice for low to medium voltage power electronics design with its superior performance and wide application range, and can meet the needs of various industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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