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IXFH40N50Q-VB Product details
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1. IXFH40N50Q-VB Product Introduction
IXFH40N50Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, making it an excellent performer in the field of power electronics. IXFH40N50Q-VB adopts advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, with an on-resistance of only 80mΩ@VGS=10V, ensuring high efficiency and low heat generation, and is widely used in various types of high-voltage power conversion and control systems.
IXFH40N50Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, making it an excellent performer in the field of power electronics. IXFH40N50Q-VB adopts advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, with an on-resistance of only 80mΩ@VGS=10V, ensuring high efficiency and low heat generation, and is widely used in various types of high-voltage power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFH40N50Q-VB Detailed parameter description
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 500V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.8V |
| On-resistance (RDS(ON)) | 80mΩ @ VGS=10V |
| Maximum drain current (ID) | 40A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 500V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.8V |
| On-resistance (RDS(ON)) | 80mΩ @ VGS=10V |
| Maximum drain current (ID) | 40A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
Domain and module applications：
3. Application fields and modules
1. **Switching Power Supply (SMPS)**
IXFH40N50Q-VB is widely used in high-efficiency switching power supplies, especially for AC-DC and DC-DC converters. Its 500V withstand voltage and low on-resistance can effectively reduce energy loss and improve power conversion efficiency, suitable for various power adapters and chargers.
2. **Electric Vehicle Charging System**
This MOSFET performs well in electric vehicle chargers and inverters, can handle high voltage and high current power conversion tasks, ensure the efficiency and stability of the charging process, and provide strong support for the fast charging of electric vehicles.
3. **Industrial Motor Control**
IXFH40N50Q-VB is widely used in motor control systems in industrial automation, especially in motor drives that require high power and high-frequency switching. Its high withstand voltage and high current capabilities ensure stable operation under heavy load conditions, meeting the strict requirements of industrial equipment for performance and reliability.
4. **Renewable Energy Systems**
In solar inverters and wind power generation systems, this MOSFET can efficiently achieve DC to AC power conversion, supporting efficient management of renewable energy. Its high voltage characteristics and low on-resistance make it an ideal choice for these applications, helping to improve the overall efficiency of the system.
In summary, the IXFH40N50Q-VB is an ideal choice for high-performance, high-reliability applications with its high withstand voltage, high current and low on-resistance.
1. **Switching Power Supply (SMPS)**
IXFH40N50Q-VB is widely used in high-efficiency switching power supplies, especially for AC-DC and DC-DC converters. Its 500V withstand voltage and low on-resistance can effectively reduce energy loss and improve power conversion efficiency, suitable for various power adapters and chargers.
2. **Electric Vehicle Charging System**
This MOSFET performs well in electric vehicle chargers and inverters, can handle high voltage and high current power conversion tasks, ensure the efficiency and stability of the charging process, and provide strong support for the fast charging of electric vehicles.
3. **Industrial Motor Control**
IXFH40N50Q-VB is widely used in motor control systems in industrial automation, especially in motor drives that require high power and high-frequency switching. Its high withstand voltage and high current capabilities ensure stable operation under heavy load conditions, meeting the strict requirements of industrial equipment for performance and reliability.
4. **Renewable Energy Systems**
In solar inverters and wind power generation systems, this MOSFET can efficiently achieve DC to AC power conversion, supporting efficient management of renewable energy. Its high voltage characteristics and low on-resistance make it an ideal choice for these applications, helping to improve the overall efficiency of the system.
In summary, the IXFH40N50Q-VB is an ideal choice for high-performance, high-reliability applications with its high withstand voltage, high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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